scholarly journals Study on radio frequency reactive sputtering deposition of silicon nitride thin films

1992 ◽  
Vol 10 (3) ◽  
pp. 462-467 ◽  
Author(s):  
F. C. Stedile ◽  
I. J. R. Baumvol ◽  
W. H. Schreiner ◽  
F. L. Freire
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Sputtering Deposition

Deposition of magnesium hydride thin films using radio frequency reactive sputtering

2011 ◽  
Vol 519 (18) ◽  
pp. 5949-5954 ◽  
Author(s):  
C. Platzer-Björkman ◽  
T. Mongstad ◽  
J.P. Mæhlen ◽  
A. Baldi ◽  
S. Karazhanov ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Magnesium Hydride

scholarly journals Tin nitride thin films prepared by radio‐frequency reactive sputtering

1995 ◽  
Vol 77 (12) ◽  
pp. 6641-6645 ◽  
Author(s):  
Toshiro Maruyama ◽  
Tomonori Morishita
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Tin Nitride

scholarly journals Reactive sputtering deposition of SiO2 thin films

2008 ◽  
Vol 73 (1) ◽  
pp. 121-126
Author(s):  
Ivan Radovic ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reactive Sputtering ◽  
Beam Current ◽  
Sputtering Deposition ◽  
Gas Cylinder ◽  
High Purity Silicon

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5?10-6-2?10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1?10-3 mbar. The substrate temperature was held at 550?C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550?C, an oxygen partial pressure of 2?10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6?10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

scholarly journals Copper nitride thin films prepared by radio‐frequency reactive sputtering

1995 ◽  
Vol 78 (6) ◽  
pp. 4104-4107 ◽  
Author(s):  
Toshiro Maruyama ◽  
Tomonori Morishita
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Copper Nitride

Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films

2012 ◽  
Vol 520 (6) ◽  
pp. 1698-1704 ◽  
Author(s):  
Nanke Jiang ◽  
Daniel G. Georgiev ◽  
Ting Wen ◽  
Ahalapitiya H. Jayatissa
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Sputtering Deposition ◽  
Radio Frequency Sputtering ◽  
Zinc Nitride

Reactive sputtering deposition of photocatalytic TiO2 thin films on glass substrates

2007 ◽  
Vol 138 (2) ◽  
pp. 139-143 ◽  
Author(s):  
C.J. Tavares ◽  
J. Vieira ◽  
L. Rebouta ◽  
G. Hungerford ◽  
P. Coutinho ◽  
...  
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Tio2 Thin Films ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Photocatalytic Tio2
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