Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition

2010 ◽  
Vol 49 (6) ◽  
pp. 063802 ◽  
Author(s):  
Cheng-Chung Lee
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Radio Frequency ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Optical Silicon

Ion-beam sputtering deposition of CsI thin films

2004 ◽  
Vol 80 (8) ◽  
pp. 1789-1791 ◽  
Author(s):  
M.A. Nitti ◽  
A. Valentini ◽  
G.S. Senesi ◽  
G. Ventruti ◽  
E. Nappi ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

Optimization in fabricating bismuth telluride thin films by ion beam sputtering deposition

2012 ◽  
Vol 520 (16) ◽  
pp. 5245-5248 ◽  
Author(s):  
Z.H. Zheng ◽  
P. Fan ◽  
T.B. Chen ◽  
Z.K. Cai ◽  
P.J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Telluride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

Residual stress of graded-index-like films deposited by radio frequency ion-beam sputtering

2009 ◽  
Vol 517 (5) ◽  
pp. 1746-1749 ◽  
Author(s):  
Chien-Jen Tang ◽  
Cheng-Chung Jaing ◽  
Kai Wu ◽  
Cheng-Chung Lee
Keyword(s):  
Residual Stress ◽  
Radio Frequency ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Graded Index ◽  
Beam Sputtering

A Study on the Process of ZnO Thin Films Prepared by Ion Beam Sputtering

2011 ◽  
Vol 233-235 ◽  
pp. 2399-2402 ◽  
Author(s):  
Shen Jiang Wu ◽  
Wei Shi ◽  
Jun Hong Su ◽  
Wen Qi Wang
Keyword(s):  
Thin Films ◽  
Orthogonal Experiment ◽  
Ion Beam ◽  
Experimental Result ◽  
Zno Thin Films ◽  
Ion Beam Sputtering ◽  
Technological Parameters ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Deposition Technology

Based on the ion beam sputtering deposition technology, we adopted the reactive sputtering deposition method to accomplish the coating on the glass substrata with ZnO thin films. We used the four-factor and three-level L9(34) orthogonal experiment to obtain the best technological parameters of deposited ZnO thin films: discharge voltage 3.5KV, oxygen current capacity 8SCCM, the coil current 8A, the distance between target and substrata 140mm. The purity of the deposited ZnO thin film is 85.77%, and it has the good crystallization in orientation. The experimental results show that research and development of the ion beam sputtering source is advanced and has a good application value, and the ion beam sputtering deposition technology can be used to deposit the preferred orientation thin films with good performance. The findings have provided the experimental result and the beneficial reference for the ion beam sputtering deposition research.

Preparation of high J c YBa2Cu3O7?? superconducting thin films by ion beam sputtering deposition

1991 ◽  
Vol 52 (3) ◽  
pp. 203-205
Author(s):  
Congxin Ren ◽  
Guoliang Chen ◽  
Jianmin Chen ◽  
Jie Yang ◽  
Yijie Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Superconducting Thin Films ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering
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