Radiative substrate heating for high‐Tc superconducting thin‐film deposition: Film‐growth‐induced temperature variation

1992 ◽  
Vol 10 (6) ◽  
pp. 3407-3410 ◽  
Author(s):  
A. C. Westerheim ◽  
B. I. Choi ◽  
M. I. Flik ◽  
M. J. Cima ◽  
R. L. Slattery ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Variation ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Superconducting Thin Film ◽  
High Tc ◽  
Substrate Heating

HIGH Tc SUPERCONDUCTING THIN FILM DEPOSITION BY LASER INDUCED FORWARD TRANSFER

1992 ◽  
Vol 7 (1) ◽  
pp. 31-51 ◽  
Author(s):  
E. Fogarassy ◽  
C. Fuchs ◽  
S. de Unamuno ◽  
J. Perriere ◽  
F. Kerherve
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Superconducting Thin Film ◽  
High Tc ◽  
Forward Transfer

scholarly journals A FRACTAL MODEL FOR THE FIRST STAGES OF THIN FILM GROWTH

Fractals ◽  
1996 ◽  
Vol 04 (03) ◽  
pp. 321-329 ◽  
Author(s):  
PABLO JENSEN ◽  
ALBERT-LÁSZLÓ BARABÁSI ◽  
HERNÁN LARRALDE ◽  
SHLOMO HAVLIN ◽  
H. EUGENE STANLEY
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Dynamical Evolution ◽  
Thin Film Deposition ◽  
Fractal Model ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Small Cluster ◽  
Diffusion Controlled ◽  
Cluster Diffusion

In this paper, we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows us to understand many experiments of thin film deposition. In the Sec. 1, we describe the model, which incorporates deposition, particle and cluster diffusion, and aggregation. In Sec. 2, we study the dynamical evolution of the model. Finally, we analyze the effects of small cluster mobility and show that the introduction of cluster diffusion dramatically affects the dynamics of film growth. Some of these effects can be tested experimentally.

Thin Film Deposition and Growth Processes by Ionized Cluster Beams

1990 ◽  
Vol 206 ◽  
Author(s):  
I. Yamada ◽  
G.H. Takaoka ◽  
H. Usui ◽  
S.K. Koh
Keyword(s):  
Thin Film ◽  
Cluster Size ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Cluster Beam ◽  
Film Nucleation ◽  
Cluster Beams

ABSTRACTAtomic scale imaging by STM and TEM of the initial stages of film growth of Ag and Au on graphite substrates indicate that the film nucleation processes are markedly different for ionized cluster beam (ICB) and molecular beam (MBE) deposition. Recent results on measurements of cluster size and formation of epitaxial metal-semiconductor layers by ICB are also discussed.

Multiscale Modeling of CdTe Thin Film Deposition Process

2013 ◽  
Vol 1524 ◽  
Author(s):  
Alexey Gavrikov ◽  
Andrey Knizhnik ◽  
Dmitry Krasikov ◽  
Boris Potapkin ◽  
Svetlana Selezneva ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Diffusion Processes ◽  
Kinetic Monte Carlo ◽  
Local Environment ◽  
Multiscale Model ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Photovoltaic Properties

ABSTRACTDeposition of semiconductor films is a key process for production of thin-film solar cells, such as CdTe or CIGS cells. In order to optimize photovoltaic properties of the film a comprehensive model of the deposition process should be build, which can relate deposition conditions and film properties. We have developed a multiscale model of deposition of CdTe film in close space sublimation (CSS) process. The model is based on kinetic Monte Carlo method on the rigid lattice, in which each site can be occupied by either Cd or Te atom. The model tabulates the energy of the site as a function of its local environment. These energies were obtained from first-principles calculates and then approximated with analytical formulas. Based on determined energies of each site we performed exchange (diffusion) processes using Metropolis algorithm. In addition the model included adsorption and desorption processes of Cd and Te2 species. The results of the model show that a steady-state structure of the surface layer is formed during film growth. The model can reproduce transition from film deposition to film etching depending on external conditions. Moreover, the model can predict deposition rates for non-stoichiometric gas compositions.

Thin Film Processing for High-Tc Superconductors of Bi-System

1989 ◽  
Vol 169 ◽  
Author(s):  
K. Wasa ◽  
H. Adachi ◽  
K. Hirochi ◽  
Y. Ichikawa ◽  
K. Setsune
Keyword(s):  
Thin Film ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Layer By Layer ◽  
High Tc Superconductors ◽  
High Tc ◽  
Superconducting Phases ◽  
High Tc Phase ◽  
Deposition Processes

AbstractBasic thin film deposition processes for the high-Tc superconductors of Bi-systems are described. There appear several superconducting phases including the low-Tc phase Bi2Sr2Ca1 Cu2Ox and the high-Tc phase Bi2Sr2Ca2Cu3Ox. Thin films with these superconducting phases are synthesized by a selection of the substrate temperature Ts during the deposition : the high-Tc phase with Tc=100K is synthesized at Ts>800 °C; the low-Tc phase with Tc=80K, at Ts<600°C. However, these films often comprise show structure comprizing the different superconducting phases.The close control of the superconducting phase has been achieved by the layer-by-layer deposition in the atomic layer epitaxy process.

Thermochemical considerations in MOCVD high Tc thin film deposition

1994 ◽  
Vol 235-240 ◽  
pp. 309-310 ◽  
Author(s):  
A. Pisch ◽  
F. Weiss ◽  
C. Bernard
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
High Tc

scholarly journals Simulation of the optical coating deposition

2018 ◽  
Vol 7 (1-2) ◽  
pp. 13-22 ◽  
Author(s):  
Fedor Grigoriev ◽  
Vladimir Sulimov ◽  
Alexander Tikhonravov
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Structural Parameter ◽  
Optical Coating ◽  
Mathematical Methods ◽  
Density Profiles ◽  
Multi Scale

AbstractA brief review of the mathematical methods of thin-film growth simulation and results of their applications is presented. Both full-atomistic and multi-scale approaches that were used in the studies of thin-film deposition are considered. The results of the structural parameter simulation including density profiles, roughness, porosity, point defect concentration, and others are discussed. The application of the quantum level methods to the simulation of the thin-film electronic and optical properties is considered. Special attention is paid to the simulation of the silicon dioxide thin films.

Molecular-Dynamics Simulations of Laser-Ablation and Ionassisted Thin Film Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
H. Feil ◽  
J.S.C. Kools ◽  
J. Dieleman
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Laser Ablation ◽  
Molecular Dynamics Simulations ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Fluences ◽  
Cu Thin Film ◽  
Dynamics Simulations

ABSTRACTMolecular dynamics simulations are performed of Cu thin film growth on Cu (111). Ion-Assisted Deposition is simulated by bombarding the substrate with Cu+ ions with a kinetic energy of 80 eV, while 1 eV Cu atoms are used for the simulation of Laser Ablation Deposition. It appears that Ion-Assisted Deposition leads to sputtering, enhanced surface mobility, surface disorder, mixing and rather deep damage. This is discussed in some detail. Laser Ablation Deposition, using laser fluences just above the ablation threshold, does not lead to damage and mixing. Sharper interfaces and more perfect heterostructures and superlattices can be produced using Laser Ablation Deposition.

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