Heater for high Tc oxide superconducting thin‐film deposition

1991 ◽  
Vol 62 (12) ◽  
pp. 3104-3105 ◽  
Author(s):  
B. Oh ◽  
R. P. Robertazzi
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Superconducting Thin Film ◽  
High Tc

HIGH Tc SUPERCONDUCTING THIN FILM DEPOSITION BY LASER INDUCED FORWARD TRANSFER

1992 ◽  
Vol 7 (1) ◽  
pp. 31-51 ◽  
Author(s):  
E. Fogarassy ◽  
C. Fuchs ◽  
S. de Unamuno ◽  
J. Perriere ◽  
F. Kerherve
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Superconducting Thin Film ◽  
High Tc ◽  
Forward Transfer

Thin Film Processing for High-Tc Superconductors of Bi-System

1989 ◽  
Vol 169 ◽  
Author(s):  
K. Wasa ◽  
H. Adachi ◽  
K. Hirochi ◽  
Y. Ichikawa ◽  
K. Setsune
Keyword(s):  
Thin Film ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Layer By Layer ◽  
High Tc Superconductors ◽  
High Tc ◽  
Superconducting Phases ◽  
High Tc Phase ◽  
Deposition Processes

AbstractBasic thin film deposition processes for the high-Tc superconductors of Bi-systems are described. There appear several superconducting phases including the low-Tc phase Bi2Sr2Ca1 Cu2Ox and the high-Tc phase Bi2Sr2Ca2Cu3Ox. Thin films with these superconducting phases are synthesized by a selection of the substrate temperature Ts during the deposition : the high-Tc phase with Tc=100K is synthesized at Ts>800 °C; the low-Tc phase with Tc=80K, at Ts<600°C. However, these films often comprise show structure comprizing the different superconducting phases.The close control of the superconducting phase has been achieved by the layer-by-layer deposition in the atomic layer epitaxy process.

Thermochemical considerations in MOCVD high Tc thin film deposition

1994 ◽  
Vol 235-240 ◽  
pp. 309-310 ◽  
Author(s):  
A. Pisch ◽  
F. Weiss ◽  
C. Bernard
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
High Tc

Thin film processing for high-Tc superconductors of the Bi-system

1991 ◽  
Vol 6 (7) ◽  
pp. 1595-1604 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Hideaki Adachi ◽  
Kumiko Hirochi ◽  
Yo Ichikawa ◽  
Tomoaki Matsushima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Superconductors ◽  
Minimum Thickness ◽  
High Tc ◽  
Sputtering Deposition ◽  
Crystal Unit Cell ◽  
Deposition Processes ◽  
Controlled Deposition

Basic thin film deposition processes for controlled deposition of the high-Tc superconductors of the Bi-systems are described. The layered structures of Bi-oxide superconductors are fabricated by a multitarget sputtering process. The multitarget sputtering process realizes the controlled deposition of single phase Bi-oxide superconductors, Bi2O2 · 2SrO · (n −1)CaO · nCuO2 for n = 1 to 5. The minimum thickness controlled by the multitarget sputtering is a half crystal unit-cell of around 15 Å, and the superlattices comprising (AkBk) · m, where A and B denote the Bi-oxide superconductors with different numbers of Cu–O layers, could be fabricated for k > 1, although ion mixing takes place during the sputtering deposition due to the bombardment of the highly energetic sputtered adatoms. Multitarget sputtering will be available for the fabrication of the artificially-made layered oxide superconductors (ALOS).

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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