Thin Film Deposition and Growth Processes by Ionized Cluster Beams

1990 ◽  
Vol 206 ◽  
Author(s):  
I. Yamada ◽  
G.H. Takaoka ◽  
H. Usui ◽  
S.K. Koh
Keyword(s):  
Thin Film ◽  
Cluster Size ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Cluster Beam ◽  
Film Nucleation ◽  
Cluster Beams

ABSTRACTAtomic scale imaging by STM and TEM of the initial stages of film growth of Ag and Au on graphite substrates indicate that the film nucleation processes are markedly different for ionized cluster beam (ICB) and molecular beam (MBE) deposition. Recent results on measurements of cluster size and formation of epitaxial metal-semiconductor layers by ICB are also discussed.

Molecular Beam Epitaxy: Thin Film Growth and Surface Studies

MRS Bulletin ◽  
1988 ◽  
Vol 13 (11) ◽  
pp. 29-36 ◽  
Author(s):  
Theodore D. Moustakas
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Ultrahigh Vacuum ◽  
Physical Method ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Gaas Films

Molecular Beam Epitaxy (MBE) is a thin film deposition process in which thermal beams of atoms or molecules react on the clean surface of a single-crystalline substrate, held at high temperatures under ultrahigh vacuum conditions, to form an epitaxial film. Thus, contrary to the CVD processes described in the other articles, the MBE process is a physical method of thin film deposition.The vacuum requirements for the MBE process are typically better than 10−10torr. This makes it possible to grow epitaxial films with high purity and excellent crystal quality at relatively low substrate temperatures. Additionally, the ultrahigh vacuum environment allows the study of surface, interface, and bulk properties of the growing film in real time, by employing a variety of structural and analytical probes.Although the MBE deposition process was first proposed by Günther in 1958, its implementation had to wait for the development of the ultrahigh vacuum technology. In 1968 Davey and Pankey successfully grew epitaxial GaAs films by the MBE process. At the same time Arthur's work on the kinetics of GaAs growth laid the groundwork for the growth of high quality MBE films of GaAs and other III-V compounds by Arthur and LePore and Cho.

scholarly journals A FRACTAL MODEL FOR THE FIRST STAGES OF THIN FILM GROWTH

Fractals ◽  
1996 ◽  
Vol 04 (03) ◽  
pp. 321-329 ◽  
Author(s):  
PABLO JENSEN ◽  
ALBERT-LÁSZLÓ BARABÁSI ◽  
HERNÁN LARRALDE ◽  
SHLOMO HAVLIN ◽  
H. EUGENE STANLEY
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Dynamical Evolution ◽  
Thin Film Deposition ◽  
Fractal Model ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Small Cluster ◽  
Diffusion Controlled ◽  
Cluster Diffusion

In this paper, we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows us to understand many experiments of thin film deposition. In the Sec. 1, we describe the model, which incorporates deposition, particle and cluster diffusion, and aggregation. In Sec. 2, we study the dynamical evolution of the model. Finally, we analyze the effects of small cluster mobility and show that the introduction of cluster diffusion dramatically affects the dynamics of film growth. Some of these effects can be tested experimentally.

Simulations of thin film deposition from atomic and cluster beams

1996 ◽  
Vol 37 (1-3) ◽  
pp. 1-7 ◽  
Author(s):  
G.H. Gilmer ◽  
C. Roland ◽  
D. Stock ◽  
M. Jaraiz ◽  
T. Diaz de la Rubia
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cluster Beams

scholarly journals Polymer assisted deposition of epitaxial oxide thin films

2018 ◽  
Vol 6 (15) ◽  
pp. 3834-3844 ◽  
Author(s):  
José Manuel Vila-Fungueiriño ◽  
Beatriz Rivas-Murias ◽  
Juan Rubio-Zuazo ◽  
Adrian Carretero-Genevrier ◽  
Massimo Lazzari ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Deposition ◽  
Chemical Solution ◽  
Solution Methods ◽  
Epitaxial Oxide

Chemical solution methods for thin-film deposition constitute an affordable alternative to high-vacuum physical technologies, like Sputtering, Pulsed Laser Deposition (PLD) or Molecular Beam Epitaxy (MBE).

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

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