The effect of radio frequency substrate biasing in the deposition of diamond‐like carbon films in an electron cyclotron resonance discharge

1991 ◽  
Vol 9 (3) ◽  
pp. 1129-1133 ◽  
Author(s):  
P. W. Pastel ◽  
W. J. Varhue
Keyword(s):  
Radio Frequency ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Carbon Films ◽  
Electron Cyclotron ◽  
Diamond Like Carbon

In-Situ Ellipsometric Monitoring of the Electron Cyclotron Resonance Etching of Diamond-Like Carbon

1994 ◽  
Vol 349 ◽  
Author(s):  
N.J. Ianno ◽  
S. Ahmer ◽  
S. Pittal ◽  
John A. Woollam
Keyword(s):  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Carbon Films ◽  
Electron Cyclotron ◽  
Diamond Like Carbon ◽  
Strong Function ◽  
Dc Bias ◽  
Input Variables

ABSTRACTThe electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

Plasma Deposition of Diamond-Like Carbon and Carbon-Nitride Films in an Electron Cyclotron Resonance-Radio Frequency Discharge

1998 ◽  
Vol 544 ◽  
Author(s):  
Guy Turban ◽  
Marjan Zarrabian ◽  
Junegie Hong
Keyword(s):  
Radio Frequency ◽  
Amorphous Carbon ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Low Pressure ◽  
Carbon Films ◽  
Electron Cyclotron ◽  
Ex Situ ◽  
Amorphous Carbon Films ◽  
The Impact

AbstractHydrogenated and nitrogenated amorphous carbon films, a-C:H and a-C:H:N, were elaborated by Plasma Enhanced Chemical Vapor Deposition (PECVD) in a dual Electron Cyclotron Resonance - Radio Frequency (ECR-RF) discharge of methane and/or nitrogen. The use of a low pressure plasma (2.6 mTorr) and a capacitive coupling of the substrate, separately from the electrical power of the ECR source, leads to reach new conditions of preparation. The ions and radicals fluxes, Φi and ΦR, determined respectively from the Langmuir probe measurements and the Mass Spectrometry (MS) give a ratio ΦR/Φi of order of 20. The CH3 radicals were identified and their concentration was measured from the technique of threshold ionization. It is shown that, even at low pressure, numerous ion-molecule reactions take place in the gas phase which explain the formation of major ions CH5+. and C2H5+. The plasma-surface interaction is studied by in-situ kinetic ellipsometry and by ex-situ X-ray Photoelectron Spectroscopy (XPS) measurements of deposited films. The role of the impact energy of ions, during the growth of films, is studied by Ultra-Violet-Visible spectroscopic ellipsometry. A new technique of deposition by alternating sequences of «C H4 deposition - treatment by N2, plasma » is described in this paper. The resulted a-C:H:N films are compared to those elaborated from CH4-N2 plasmas. The aim of the discussion on the presented results is to better understand the mechanism of the growth of amorphous carbon films by PECVD.

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