In-Situ Ellipsometric Monitoring of the Electron Cyclotron Resonance Etching of Diamond-Like Carbon

1994 ◽  
Vol 349 ◽  
Author(s):  
N.J. Ianno ◽  
S. Ahmer ◽  
S. Pittal ◽  
John A. Woollam
Keyword(s):  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Carbon Films ◽  
Electron Cyclotron ◽  
Diamond Like Carbon ◽  
Strong Function ◽  
Dc Bias ◽  
Input Variables

ABSTRACTThe electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

In-Situ Monitoring by Mass Spectrometry for GaAs Etched with An Electron Cyclotron Resonance Source

1993 ◽  
Vol 324 ◽  
Author(s):  
D. J. Kahaian ◽  
S. W. Pang
Keyword(s):  
Mass Spectrometry ◽  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Diagnostic Technique ◽  
Electron Cyclotron ◽  
In Situ Monitoring ◽  
Rf Power ◽  
Dc Bias

AbstractQuadrupole mass spectrometry (QMS) has been used as an in-situ diagnostic technique for GaAs etched with an electron cyclotron resonance source. Changes in the detected signal intensities for reactive species and etch products have been related to corresponding changes in the etch rate as several process parameters were varied. The detected 75As+ and to a lesser degree, 35C1+ and 70C12+, were observed to follow etch rate as microwave power, rf power, source to sample distance, temperature, and pressure were varied. The self-induced dc bias (IVdcl) determines the etch rate dependence on etch time. The time delay before saturation of the monitored 75As+ signal corresponding to a constant etch rate is inversely proportional to IVdcl. The addition of N2/O2 in a 4:1 ratio to constitute 15% of the total discharge resulted in a 95% decrease in the intensity of the monitored 75As+ signal. The measured etch rate decreased by 75%.

Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen

1995 ◽  
Vol 395 ◽  
Author(s):  
L. Zhang ◽  
J. Ramer ◽  
J. Brown ◽  
K. Zheng ◽  
L.F. Lester ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Defect Density ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
Good Surface ◽  
Dc Bias ◽  
Gate Recess

ABSTRACTElectron cyclotron resonance (ECR) plasma etching characteristics of gallium nitride (GaN) are investigated using low pressure (4-10 mTorr) SiCl4/Ar and Cl2/H2/Ar ECR discharges. The purpose of this effort is to develop a dry etching process for making laser mirrors on GaN and to examine dry etching processes of GaN that do not require hydrogen, which is known to cause carrier compensation in GaN. The etch rate is found to increase near-linearly with increasing DC bias, and a minimum DC bias of 100V is required to initiate etching in SiCl4/Ar. We have also found that the material quality significantly affects the etch rate. The latter decreases with x-ray rocking curve half-width and increases with defect density. A reasonable etch rate of 660Ǻ/min and good surface morphologies obtained in SiCl/Ar ECR etching make this process suitable for gate recess of an FET. An etch rate of 5270Ǻ/min has been achieved in Cl2/H2/Ar plasmas. This is the highest reported etch rate of GaN so far. The smooth and vertical etch sidewalls (etch to mask selectivity of 16 is obtained) make this process promising for dry-etched laser mirrors on GaN.

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