Diamond thin film deposition on amorphous diamond film surface

1994 ◽  
Author(s):  
Jintian He ◽  
Da-jun Liu ◽  
Xiaoping Wang ◽  
Binglin Zhang ◽  
Jianen Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Diamond Film ◽  
Film Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diamond Thin Film

CCl Radicals As a Carbon Source for Diamond Thin Film Deposition

2014 ◽  
Vol 5 (3) ◽  
pp. 481-484 ◽  
Author(s):  
Qi An ◽  
Mu-Jeng Cheng ◽  
William A. Goddard ◽  
Andres Jaramillo-Botero
Keyword(s):  
Thin Film ◽  
Carbon Source ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diamond Thin Film

Ion-Beam-Assisted Deposition and Synthesis

MRS Bulletin ◽  
1987 ◽  
Vol 12 (2) ◽  
pp. 40-51 ◽  
Author(s):  
S.M. Rossnagel ◽  
J.J. Cuomo
Keyword(s):  
Thin Film ◽  
Particle Bombardment ◽  
Energetic Particle ◽  
Ion Beam ◽  
Chemical Properties ◽  
Film Surface ◽  
Arrival Rate ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Deposition Techniques

Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition. Bombardment by low energy ions occurs during almost all plasma-based thin film deposition techniques. Bombardment of a growing film, particularly by accelerated ions, can also be combined with non-plasma-based deposition techniques, such as evaporation, to simulate some of the effects observed with sputtering. The bombarding particle flux is usually controllable so that the arrival rate, energy, and species can be independently varied from the depositing flux. Thus, a basic aspect of ion-beam-based deposition techniques is the “control” often absent in plasma-based techniques. In plasmas, the voltage, current, and pressure are all interdependent. The energetic bombardment at the substrate-film interface depends on the various properties of the plasma, as does the deposition rate. It is often difficult, or even impossible, to decouple these processes. With ion-beam-based deposition techniques, the ion bombardment is essentially independent of the deposition process, and both can be more easily controlled.The incident energetic particle contributes some of its energy or momentum to irreversibly change the dynamics of the film surface. The incident particle may also be incorporated into the growing film, changing the film's chemical nature. The changes induced by particle bombardment during deposition are often not characteristic of equilibrium thermodynamics because the incident particle's energy is often many times the local adsorption or binding energy.

Waveguide refractometry as a probe of thin film optical uniformity

1997 ◽  
Vol 12 (2) ◽  
pp. 546-551 ◽  
Author(s):  
B. G. Potter ◽  
D. Dimos ◽  
M. B. Sinclair
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Layer Structure ◽  
Sol Gel ◽  
Film Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optical Characteristics ◽  
Thin Film Layer ◽  
The Impact

Optical inhomogeneities through the thickness of a sol-gel-derived, spin-coated Pb(Zr,Ti)O3 (PZT) thin film have been evaluated using prism-coupled waveguide refractometry. Unusual waveguide coupling angle behavior has been treated using a multilayer model to describe the optical characteristics of the film. Waveguide refractometry measurements, performed after incremental reductions in film thickness, were used to develop a consistent model for optical inhomogeneity through the film thickness. Specifically, a thin film layer model, consisting of alternating layers of high and low refractive index material, was found to accurately predict irregularities in transverse-electric (TE) mode coupling angles exhibited by the film. This layer structure has a spatial periodicity that is consistent with the positions of the upper film surface at intermediate firings during film synthesis. The correlation emphasizes the impact of the multistep thin-film deposition approach on the optical characteristics of the resulting thin film.

The Effects of Solvents to ZnO:Al Transparent Conductive Thin Films Synthesized by Sol-Gel Method

2011 ◽  
Vol 320 ◽  
pp. 124-129
Author(s):  
Yung Kuan Tseng ◽  
Shih Chun Chien ◽  
Ming Hung Chuang ◽  
Chi Sheng Hsu ◽  
Yen Cheng Chen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Film Surface ◽  
Precursor Solution ◽  
Thin Film Deposition ◽  
Xrd Analysis ◽  
Film Deposition ◽  
Gel Method ◽  
Sol Gel Method

The purpose of this study was to discuss the effects of different solvent systems for aluminum doped zinc oxide (AZO) thin film deposition by using the sol-gel method. In the conventional sol-gel method of producing AZO thin films, the solution selected as the precursor solvent was used ethylene glycol monomethylether (EGME), which in this study propylene glycol mono-methyl ether (PGME) was used. The precursor solution was observed by TGA/DSC to understand the variations while heating. The two prepared precursor solutions were then respectively spin coated onto substrates of boron silicate glass. XRD analysis indicated both showed significant c-axis preferred orientation. The surface morphology of the films was observed by FESEM, which showed that the thin film surface by PGME solvent was smoother and dense. A four-point probe was used to measure the electrical resistance of the thin films, which the measured results indicated that the thin film produced by PGME had lower resistivity than those produced by EGME. Resulting with a thin film electric resistance reaching as low as 3.474×10-3(W×cm). The visible light transparency was determined via UV-vis analysis. Results showed that the average transparency of thin films produced by the EGME solvent reached 95% and above, where the average transparency from PGME solvent still reached 90% and above. Experimental results demonstrated that PGME is a good option to synthesize AZO thin films.

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