Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates

1989 ◽  
Vol 7 (3) ◽  
pp. 1130-1135 ◽  
Author(s):  
J. B. Posthill ◽  
R. A. Rudder ◽  
S. V. Hattangady ◽  
G. G. Fountain ◽  
D. J. Vitkavage ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Characterization of SiOxNy films deposited from SiCI4 by remote plasma-enhanced chemical vapor deposition

1998 ◽  
Vol 317 (1-2) ◽  
pp. 149-152 ◽  
Author(s):  
O Sánchez ◽  
M.A Aguilar ◽  
C Falcony ◽  
J.M Martı́nez-Duart ◽  
M Hernández Vélez
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Crystallographic characterization of GexSi1−x/Si superlattices grown by remote plasma‐enhanced chemical vapor deposition

1991 ◽  
Vol 70 (6) ◽  
pp. 3324-3328 ◽  
Author(s):  
R. Qian ◽  
B. Anthony ◽  
T. Hsu ◽  
J. Irby ◽  
D. Kinosky ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Characterization of Wurtzite Zn1-xCdxO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 43 (No. 11A) ◽  
pp. L1452-L1454 ◽  
Author(s):  
Atsushi Nakamura ◽  
Junji Ishihara ◽  
Satoshi Shigemori ◽  
Kenji Yamamoto ◽  
Toru Aoki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Metalorganic Chemical
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