Precursors for the deposition of amorphous silicon–hydrogen alloys by remote plasma enhanced chemical vapor deposition

G. N. Parsons; D. V. Tsu; C. Wang; G. Lucovsky

doi:10.1116/1.576240

Precursors for the deposition of amorphous silicon–hydrogen alloys by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576240 ◽

1989 ◽

Vol 7 (3) ◽

pp. 1124-1129 ◽

Cited By ~ 15

Author(s):

G. N. Parsons ◽

D. V. Tsu ◽

C. Wang ◽

G. Lucovsky

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma

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Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical Vapor Deposition (Remote PECVD), Annual Subcontract Report, 1 September 1990 - 31 August 1991

10.2172/6796766 ◽

1993 ◽

Author(s):

G. Lucovsky ◽

R. J. Nemanich ◽

J. Bernholc ◽

J. Whitten ◽

C. Wang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Silicon Alloys ◽

Defect Generation

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Fundamental studies of defect generation in amorphous silicon alloys grown by remote plasma-enhanced chemical-vapor deposition (Remote PECVD). Annual subcontract report, 1 September 1990--31 August 1991

10.2172/10129188 ◽

1993 ◽

Author(s):

G. Lucovsky ◽

R.J. Nemanich ◽

J. Bernholc ◽

J. Whitten ◽

C. Wang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Silicon Alloys ◽

Defect Generation

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Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical-Vapor Deposition, Final Subcontract Report, 1 July 1989-31 December 1992

10.2172/10182486 ◽

1993 ◽

Author(s):

G. Lucovsky

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Silicon Alloys ◽

Defect Generation

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Amorphous silicon, amorphous carbon and amorphous silicon carbide deposited by remote plasma chemical vapor deposition

Thin Solid Films ◽

10.1016/0040-6090(92)90279-k ◽

1992 ◽

Vol 213 (2) ◽

pp. 170-175 ◽

Cited By ~ 8

Author(s):

R.M. Young ◽

W.D. Partlow

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Amorphous Carbon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Plasma Chemical ◽

Amorphous Silicon Carbide ◽

Plasma Chemical Vapor Deposition

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Optoelectronic Properties of Amorphous Silicon Using the Plasma-Enhanced Chemical Vapor Deposition (PECVD) Technique

Plasma Deposition of Amorphous Silicon-Based Materials ◽

10.1016/b978-012137940-7/50006-1 ◽

1995 ◽

pp. 243-282 ◽

Cited By ~ 1

Author(s):

Arun Madan

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Optoelectronic Properties

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Device Relevant Doped Amorphous Silicon Thin Films by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8548298 ◽

2018 ◽

Author(s):

Boon Heng TEO ◽

Jin LIU ◽

Jia GE ◽

Delio PEREZ ◽

Edwin CARMONA ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Inductively Coupled Plasma ◽

Chemical Vapor ◽

Inductively Coupled ◽

Silicon Thin Films

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Visible photoluminescence from silicon nanoclusters embedded in silicon nitride films prepared by remote plasma-enhanced chemical vapor deposition

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2006.12.047 ◽

2007 ◽

Vol 38 (1-2) ◽

pp. 148-151 ◽

Cited By ~ 6

Author(s):

A. Benami ◽

G. Santana ◽

B.M. Monroy ◽

A. Ortiz ◽

J.C. Alonso ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Nanoclusters ◽

Remote Plasma ◽

Visible Photoluminescence ◽

Silicon Nitride Films

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In situ optical diagnosis on hydrogenated amorphous silicon grown by vibration superimposed plasma chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114284 ◽

1995 ◽

Vol 66 (9) ◽

pp. 1071-1073 ◽

Cited By ~ 5

Author(s):

Nobuo Naito ◽

Akihiro Takano ◽

Masatomo Sumiya ◽

Masashi Kawasaki ◽

Hideomi Koinuma

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Optical Diagnosis ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

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Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Cited By ~ 5

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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X‐ray photoelectron spectroscopy analysis of photostimulated chemical vapor deposition hydrogenated amorphous silicon/amorphous aluminum oxide

Applied Physics Letters ◽

10.1063/1.107407 ◽

1992 ◽

Vol 60 (10) ◽

pp. 1208-1210 ◽

Cited By ~ 1

Author(s):

K. Uwasawa ◽

F. Ishihara ◽

S. Matsumoto

Keyword(s):

Chemical Vapor Deposition ◽

Aluminum Oxide ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Spectroscopy Analysis ◽

X Ray ◽

Hydrogenated Amorphous

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