scholarly journals Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical Vapor Deposition (Remote PECVD), Annual Subcontract Report, 1 September 1990 - 31 August 1991

1993 ◽  
Author(s):  
G. Lucovsky ◽  
R. J. Nemanich ◽  
J. Bernholc ◽  
J. Whitten ◽  
C. Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Silicon Alloys ◽  
Defect Generation

Bonding Defects in Hydrogenated Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
G. Lucovsky ◽  
H. Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Alloys ◽  
High Concentrations ◽  
Charged Carrier ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

AbstractA mechanism for charged-carrier-trapping-inducedde fect metastability in hydrogenated amorphous silicon (a-Si:H) and in hydrogenated amorphous silicon alloys containing relatively high concentrations of oxygen and/or nitrogen atoms (a-Si:X:H, X = O or N) is described. The experimental results that identified this defect metastability mechanism were i) differences in the Staebler-Wronski effect in a-Si:H and a-Si:N:H alloys prepared from N2 and NH3 source gases by remote plasma-enhanced chemical-vapor deposition, and ii) differences in defect generation at N-atom terminated Si-SiO2 interfaces prepared from NH3 and N2O.

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