Chemical Structure of Ultrathin Silicon Nitride Films Grown by Low-Energy (0.25−5 keV) Nitrogen Implantation:  An Angle-Resolved X-ray Photoelectron Spectroscopy Si 2p Study

2002 ◽  
Vol 106 (16) ◽  
pp. 4261-4265 ◽  
Author(s):  
C. Palacio ◽  
A. Arranz
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Low Energy ◽  
Nitrogen Implantation ◽  
X Ray ◽  
Silicon Nitride Films

Plasma Deposited Silicon Nitride Film Chemistry

1989 ◽  
Vol 165 ◽  
Author(s):  
Justin N. Chiang ◽  
Dennis W. Hess
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Gas Composition ◽  
Stainless Steel Mesh ◽  
Film Composition ◽  
X Ray ◽  
Silicon Nitride Films

AbstractThe structure and composition of plasma deposited (PD) silicon nitride thin films formed using NH3/SiH4, N2/SiH4, and N2/SiH4/H2, discharges are compared. The effect of introducing a DC grounded stainless steel mesh between the parallel electrodes is also discussed. Chemical structure and composition of these films are measured using X-ray Photoelectron Spectroscopy and Fourier Transform Infrared Spectroscopy. Significant changes in film composition are observed with changes in gas composition and with utilization of the screen. When the screen is invoked, variations in film composition are more pronounced for PD silicon nitride films formed using N2 as the nitrogen source. An increase in the N:Si ratio occurs for all films deposited using the screen. This compositional change is reflected in increased N-H and decreased Si-H bonding. Similar changes are also observed in films deposited from a N2/SiH4/H2 discharge compared to films formed using a N2/SiH4 discharge.

Ultrathin Nitride Films Grown Under Low-Energy Ion Bombardment

1993 ◽  
Vol 316 ◽  
Author(s):  
Zhong-Min Ren ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
Yuan-Cheng DU ◽  
...  
Keyword(s):  
Activation Energy ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Low Energy ◽  
Ion Energy ◽  
Silicon Nitride Films ◽  
Thermal Nitridation

ABSTRACTBombardment of silicon surfaces by low-energy nitrogen ions has been investigated as a possible process for growing films of silicon nitride at relatively low temperature(<500°C). Broad ion beams of energy 300–1200eV have been used to grow ultrathin silicon nitride films. Film thickness and chemical states are analyzed using ellipsometery, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy(AES). As a result, thicknesses dependence on ion energy, substrate temperature and implantation time have been investigated. The thicknesses of films obtained appear to increase with ion energy in the range from 300 to 1200eV, and with time of bombardment. The thicknesses are also observed to vary slightly with substrate temperature. The growth mechanism has also been investigated and discussed. The average activation energy of nitridation rates is about 3.5meV which indicates nonthermal process kinetics, compared to an activation energy of 0.2–0.6eV for thermal nitridation. AES results show that the atomic ratio [N]/[Si] is about 1.5, larger than that of pure Si3N4. All the analyses show that silicon nitride films of about 60Å thickness have been grown on silicon by low-energy ion beam nitridation.

Estimation of the Thickness of Ultrathin Silicon Nitride Films by X-Ray Photoelectron Spectroscopy

1993 ◽  
Vol 32 (Part 1, No. 8) ◽  
pp. 3580-3583 ◽  
Author(s):  
Akiko Muto ◽  
Toshiyuki Mine ◽  
Masatoshi Nakazawa
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Silicon Nitride Films

A Two-step Electrodeposition of Pd-Cu/Cu2O Nanocomposite on FTO Substrate for Non-enzymatic Hydrogen Peroxide Sensor

2021 ◽  
Vol 17 ◽  
Author(s):  
Ke Huan ◽  
Li Tang ◽  
Dongmei Deng ◽  
Huan Wang ◽  
Xiaojing Si ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Cyclic Voltammetry ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pd Nanoparticles ◽  
Optimal Conditions ◽  
Potential Oscillation ◽  
X Ray Diffraction ◽  
X Ray

Background: Hydrogen peroxide (H2O2) is a common reagent in the production and living, but excessive H2O2 may enhance the danger to the human body. Consequently, it is very important to develop economical, fast and accurate techniques for detecting H2O2. Methods: A simple two-step electrodeposition process was applied to synthesize Pd-Cu/Cu2O nanocomposite for non-enzymatic H2O2 sensor. Cu/Cu2O nanomaterial was firstly electrodeposited on FTO by potential oscillation technique, and then Pd nanoparticles were electrodeposited on Cu/Cu2O nanomaterial by cyclic voltammetry. The chemical structure, component, and morphology of the synthesized Pd-Cu/Cu2O nanocomposite were characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The electrochemical properties of Pd-Cu/Cu2O nanocomposite were studied by cyclic voltammetry and amperometry. Results: Under optimal conditions, the as-fabricated sensor displayed a broad linear range (5-4000 µM) and low detection limit (1.8 µM) for the determination of H2O2. The proposed sensor showed good selectivity and reproducibility. Meanwhile, the proposed sensor has been successfully applied to detect H2O2 in milk. Conclusion: The Pd-Cu/Cu2O/FTO biosensor exhibits excellent electrochemical activity for H2O2 reduction, which has great potential application in the field of food safety.

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

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