Kinetics of molecular‐beam epitaxial HgCdTe growth

1988 ◽  
Vol 6 (4) ◽  
pp. 2834-2839 ◽  
Author(s):  
R. J. Koestner ◽  
H. F. Schaake
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Kinetics Of

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Fukatsu ◽  
K. Fujita ◽  
H. Yaguchi ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Lower Limit ◽  
Molecular Beam ◽  
Growth Direction ◽  
High Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics

CrystEngComm ◽  
2018 ◽  
Vol 20 (29) ◽  
pp. 4151-4163 ◽  
Author(s):  
Ankush Bag ◽  
Subhashis Das ◽  
Rahul Kumar ◽  
Dhrubes Biswas
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gan On Si ◽  
First Time ◽  
Kinetics Of

In this article, a unique correlation has been established between the defect kinetics of III-nitride adatoms and strain during plasma assisted molecular beam epitaxial (PAMBE) growth of InGaN/GaN heterostructures on silicon(111) for the first time.

Magnetic anisotropy and microstructure in molecular beam epitaxial FePt (110)/MgO (110)

1998 ◽  
Vol 84 (2) ◽  
pp. 934-939 ◽  
Author(s):  
R. F. C. Farrow ◽  
D. Weller ◽  
R. F. Marks ◽  
M. F. Toney ◽  
David J. Smith ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth
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