Molecular-beam epitaxial growth surface roughening kinetics of Ge (001): A theoretical study

1993 ◽  
Vol 11 (2) ◽  
pp. 253 ◽  
Author(s):  
R. Venkatasubramanian
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Theoretical Study ◽  
Growth Surface ◽  
Surface Roughening ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Fukatsu ◽  
K. Fujita ◽  
H. Yaguchi ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Lower Limit ◽  
Molecular Beam ◽  
Growth Direction ◽  
High Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of low‐resistivity ZnSe films

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs

1988 ◽  
Vol 53 (2) ◽  
pp. 162-164 ◽  
Author(s):  
P. Etienne ◽  
G. Creuzet ◽  
A. Friederich ◽  
F. Nguyen‐Van‐Dau ◽  
A. Fert ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors

1998 ◽  
Vol 27 (6) ◽  
pp. 747-751 ◽  
Author(s):  
R. D. Rajavel ◽  
D. M. Jamba ◽  
J. E. Jensen ◽  
O. K. Wu ◽  
P. D. Brewer ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
And Performance ◽  
Molecular Beam Epitaxial Growth
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