Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics

CrystEngComm ◽  
2018 ◽  
Vol 20 (29) ◽  
pp. 4151-4163 ◽  
Author(s):  
Ankush Bag ◽  
Subhashis Das ◽  
Rahul Kumar ◽  
Dhrubes Biswas
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gan On Si ◽  
First Time ◽  
Kinetics Of

In this article, a unique correlation has been established between the defect kinetics of III-nitride adatoms and strain during plasma assisted molecular beam epitaxial (PAMBE) growth of InGaN/GaN heterostructures on silicon(111) for the first time.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

scholarly journals IMMUNE RESPONSES IN VITRO

1971 ◽  
Vol 134 (2) ◽  
pp. 395-416 ◽  
Author(s):  
Carl W. Pierce ◽  
Barbara M. Johnson ◽  
Harriet E. Gershon ◽  
Richard Asofsky
Keyword(s):  
Culture Conditions ◽  
Antibody Concentration ◽  
Spleen Cells ◽  
Immunoglobulin Class ◽  
Cell Densities ◽  
Erythrocyte Antigen ◽  
First Time ◽  
Kinetics Of

We have demonstrated for the first time that mouse spleen cells stimulated in vitro with heterologous erythrocytes developed immunoglobulin class-specific γM, γ1, γ2a+2b, and γA plaque-forming cell (PFC) responses. A modification of the hemolytic plaque technique, the addition of goat anti-mouse µ-chain antibody to the assay preparation, specifically prevented development of all γM PFC and enabled accurate and reproducible enumeration of immunoglobulin class-specific PFC after treatment with appropriate monospecific anti-globulins and complement. Culture conditions, with regard to medium, atmosphere, agitation, and spleen cell densities, were similar to those previously shown to support only γM PFC responses. Evaluation of the kinetics of appearance of PFC showed that γM PFC reached maximum numbers on days 4–5; the magnitude of this response was 3–10 times greater than γ1 γ2a+2b, or γA PFC which reached maximum numbers on days 5–6. Optimal erythrocyte antigen dose for γM PFC responses was 107/culture, whereas a dose of 106 erythrocytes/culture consistently stimulated optimal γ1 γ2a+2b, or γA PFC responses. Investigations of the effects of anti-erythrocyte antibody on γM and γG PFC responses indicated that antibody suppressed these responses by neutralizing the effective antigenic stimulus at the macrophage-dependent phase of the response. At the same antibody concentration, γG PFC responses were more effectively suppressed than γM PFC responses. Further, γG responses could be almost completely suppressed by antibody as long as 48 hr after initiation of cultures, whereas γM PFC responses could only be completely suppressed during the first 24 hr. These results were discusssed in terms of the role of antigen in the stimulation γM and γG antibody.

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Fukatsu ◽  
K. Fujita ◽  
H. Yaguchi ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Lower Limit ◽  
Molecular Beam ◽  
Growth Direction ◽  
High Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

Dislocations and the thermal reactivity of calcite

1970 ◽  
Vol 314 (1518) ◽  
pp. 429-441 ◽  
Keyword(s):  
Chemical Reactivity ◽  
Previous History ◽  
Strain Fields ◽  
Temperature Range ◽  
Reactivity Of Solids ◽  
Dislocation Movement ◽  
History Of ◽  
First Time ◽  
Kinetics Of

A study has been made of the effect of dislocation movement on the kinetics of thermal decomposition of freshly cleaved calcite crystals. It is shown for the first time that the thermal history of the crystal has a marked effect on its reactivity and two patterns of behaviour have been identified; that in the temperature range up to ca . 700 K in which the kinetics of decomposition are sensitively dependent upon the nature and extent of the crystal’s previous history, and the range above 700 K in which annealing is rapid and reproducible kinetics are obtained for all crystals studied. This effect has not been observed in previous studies of calcite. It is suggested that this is because the experiments were carried out in the temperature range where movement of dislocations is so rapid that the surface structure is virtually constant during the measurements. Tentative correlations are made between the various stages of the observed rates of decomposition and the known dislocation systems in the crystal. The influence of applied stress was studied but because of limitations in the method of stressing the crystal, the amount of plastic deformation was small and its effect on reactivity was not marked. Qualitative consideration is given to the role of dislocations in the reactivity of solids and it is concluded that the elastic energy associated with the strain fields around or at the core of the dislocation cannot be used to promote chemical reactivity but that it is the change in the stereochemical environment of molecules in the dislocated region of the crystal which is important. ‘ . . . a curious illustration of the influence of mechanical forces over chemical affinity. . . ’ M. Faraday (1834)

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 323 (1) ◽  
pp. 68-71 ◽  
Author(s):  
A.M. Mizerov ◽  
V.N. Jmerik ◽  
M.A. Yagovkina ◽  
S.I. Troshkov ◽  
P.S. Kop'ev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document