Summary Abstract: Binding energy shifts from alloying at metal/II–VI compound semiconductor interfaces

1987 ◽  
Vol 5 (4) ◽  
pp. 1530-1532 ◽  
Author(s):  
J. Nogami ◽  
D. J. Friedman ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Binding Energy ◽  
Compound Semiconductor ◽  
Semiconductor Interfaces

Binding-energy shifts from alloying at metal–compound-semiconductor interfaces

1986 ◽  
Vol 34 (2) ◽  
pp. 669-674 ◽  
Author(s):  
J. Nogami ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Binding Energy ◽  
Compound Semiconductor ◽  
Metal Compound ◽  
Semiconductor Interfaces

New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
L. J. Brillson ◽  
R. E. Viturro ◽  
S. Chang ◽  
J. L. Shaw ◽  
C. Mailhiot ◽  
...  
Keyword(s):  
Compound Semiconductor ◽  
Photoemission Spectroscopy ◽  
Dominant Effect ◽  
Band Bending ◽  
X Ray ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Cathodoluminescence Spectroscopy ◽  
Wide Range ◽  
Spectroscopy Studies

ABSTRACTRecent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.

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