Binding-energy shifts from alloying at metal–compound-semiconductor interfaces

J. Nogami; T. Kendelewicz; I. Lindau; W. E. Spicer

doi:10.1103/physrevb.34.669

Binding-energy shifts from alloying at metal–compound-semiconductor interfaces

Physical Review B ◽

10.1103/physrevb.34.669 ◽

1986 ◽

Vol 34 (2) ◽

pp. 669-674 ◽

Cited By ~ 20

Author(s):

J. Nogami ◽

T. Kendelewicz ◽

I. Lindau ◽

W. E. Spicer

Keyword(s):

Binding Energy ◽

Compound Semiconductor ◽

Metal Compound ◽

Semiconductor Interfaces

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Comparison of chemically inert and reactive metal-compound-semiconductor interfaces: AuGa2 and gold on GaSb(001)

Thin Solid Films ◽

10.1016/0040-6090(86)90027-1 ◽

1986 ◽

Vol 137 (2) ◽

pp. 251-265 ◽

Cited By ~ 23

Author(s):

Jeffrey R. Lince ◽

R.Stanley Williams

Keyword(s):

Compound Semiconductor ◽

Metal Compound ◽

Reactive Metal ◽

Semiconductor Interfaces

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Summary Abstract: Binding energy shifts from alloying at metal/II–VI compound semiconductor interfaces

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.574599 ◽

1987 ◽

Vol 5 (4) ◽

pp. 1530-1532 ◽

Cited By ~ 1

Author(s):

J. Nogami ◽

D. J. Friedman ◽

T. Kendelewicz ◽

I. Lindau ◽

W. E. Spicer

Keyword(s):

Binding Energy ◽

Compound Semiconductor ◽

Semiconductor Interfaces

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Chemical reactions at metal/compound semiconductor interfaces: Au and GaAs

Thin Solid Films ◽

10.1016/0040-6090(92)90823-t ◽

1992 ◽

Vol 221 (1-2) ◽

pp. 254-261 ◽

Cited By ~ 14

Author(s):

Paul H. Holloway ◽

Carl H. Mueller

Keyword(s):

Chemical Reactions ◽

Compound Semiconductor ◽

Metal Compound ◽

Semiconductor Interfaces

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Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: some basic concepts and Monte-Carlo computer simulations

Surface Science Letters ◽

10.1016/0167-2584(83)90167-6 ◽

1983 ◽

Vol 132 (1-3) ◽

pp. A345 ◽

Cited By ~ 4

Author(s):

A. Madhukar

Keyword(s):

Monte Carlo ◽

Computer Simulations ◽

Vapour Phase ◽

Compound Semiconductor ◽

Phase Growth ◽

Semiconductor Interfaces ◽

Far From Equilibrium ◽

Basic Concepts ◽

Lattice Matched

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Metallurgical interactions at metallization-compound semiconductor interfaces

Thin Solid Films ◽

10.1016/0040-6090(82)90517-x ◽

1982 ◽

Vol 96 (4) ◽

pp. 347-363 ◽

Cited By ~ 11

Author(s):

V.G. Keramidas

Keyword(s):

Compound Semiconductor ◽

Semiconductor Interfaces

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Control of structure and properties of compound semiconductor interfaces by Si interface control layer

1993 (5th) International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1993.380653 ◽

2002 ◽

Author(s):

H. Hasegawa ◽

S. Kodama ◽

K. Koyanagi ◽

M. Akazawa

Keyword(s):

Compound Semiconductor ◽

Structure And Properties ◽

Interface Control ◽

Semiconductor Interfaces ◽

Control Layer

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On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states

Thin Solid Films ◽

10.1016/0040-6090(83)90430-3 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 119-140 ◽

Cited By ~ 153

Author(s):

H Hasegawa ◽

T Sawada

Keyword(s):

Electrical Properties ◽

Compound Semiconductor ◽

Interface States ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Semiconductor Interfaces

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Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_9 ◽

1992 ◽

pp. 103-107

Author(s):

A. Piccirillo ◽

P.E. Bagnoli

Keyword(s):

Silicon Nitride ◽

Optoelectronic Device ◽

Compound Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Interfaces

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Oxide/III-V Compound Semiconductor Interfaces

Physics and Chemistry of III-V Compound Semiconductor Interfaces ◽

10.1007/978-1-4684-4835-1_7 ◽

1985 ◽

pp. 403-462 ◽

Cited By ~ 42

Author(s):

C. W. Wilmsen

Keyword(s):

Compound Semiconductor ◽

Semiconductor Interfaces

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Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces

Journal of Vacuum Science and Technology ◽

10.1116/1.571118 ◽

1981 ◽

Vol 19 (3) ◽

pp. 279-289 ◽

Cited By ~ 121

Author(s):

C. W. Wilmsen

Keyword(s):

Chemical Composition ◽

Anodic Oxide ◽

Compound Semiconductor ◽

Semiconductor Interfaces

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