Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces

Journal of Vacuum Science and Technology ◽

10.1116/1.571118 ◽

1981 ◽

Vol 19 (3) ◽

pp. 279-289 ◽

Cited By ~ 121

Author(s):

C. W. Wilmsen

Keyword(s):

Chemical Composition ◽

Anodic Oxide ◽

Compound Semiconductor ◽

Semiconductor Interfaces

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Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: some basic concepts and Monte-Carlo computer simulations

Surface Science Letters ◽

10.1016/0167-2584(83)90167-6 ◽

1983 ◽

Vol 132 (1-3) ◽

pp. A345 ◽

Cited By ~ 4

Author(s):

A. Madhukar

Keyword(s):

Monte Carlo ◽

Computer Simulations ◽

Vapour Phase ◽

Compound Semiconductor ◽

Phase Growth ◽

Semiconductor Interfaces ◽

Far From Equilibrium ◽

Basic Concepts ◽

Lattice Matched

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Porous Anodic Oxide Films Grown On Compound Semiconductor

ECS Meeting Abstracts ◽

10.1149/ma2013-02/21/1829 ◽

2013 ◽

Keyword(s):

Oxide Films ◽

Anodic Oxide ◽

Compound Semiconductor ◽

Anodic Oxide Films

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Metallurgical interactions at metallization-compound semiconductor interfaces

Thin Solid Films ◽

10.1016/0040-6090(82)90517-x ◽

1982 ◽

Vol 96 (4) ◽

pp. 347-363 ◽

Cited By ~ 11

Author(s):

V.G. Keramidas

Keyword(s):

Compound Semiconductor ◽

Semiconductor Interfaces

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Comparison of chemically inert and reactive metal-compound-semiconductor interfaces: AuGa2 and gold on GaSb(001)

Thin Solid Films ◽

10.1016/0040-6090(86)90027-1 ◽

1986 ◽

Vol 137 (2) ◽

pp. 251-265 ◽

Cited By ~ 23

Author(s):

Jeffrey R. Lince ◽

R.Stanley Williams

Keyword(s):

Compound Semiconductor ◽

Metal Compound ◽

Reactive Metal ◽

Semiconductor Interfaces

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Control of structure and properties of compound semiconductor interfaces by Si interface control layer

1993 (5th) International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1993.380653 ◽

2002 ◽

Author(s):

H. Hasegawa ◽

S. Kodama ◽

K. Koyanagi ◽

M. Akazawa

Keyword(s):

Compound Semiconductor ◽

Structure And Properties ◽

Interface Control ◽

Semiconductor Interfaces ◽

Control Layer

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On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states

Thin Solid Films ◽

10.1016/0040-6090(83)90430-3 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 119-140 ◽

Cited By ~ 153

Author(s):

H Hasegawa ◽

T Sawada

Keyword(s):

Electrical Properties ◽

Compound Semiconductor ◽

Interface States ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Semiconductor Interfaces

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Atomic Structure and Chemical Composition of Compound Semiconductor Surfaces

Hyomen Kagaku ◽

10.1380/jsssj.1.19 ◽

1980 ◽

Vol 1 (1) ◽

pp. 19-34 ◽

Cited By ~ 1

Author(s):

Atsuko Ebina

Keyword(s):

Chemical Composition ◽

Atomic Structure ◽

Compound Semiconductor ◽

Semiconductor Surfaces

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Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_9 ◽

1992 ◽

pp. 103-107

Author(s):

A. Piccirillo ◽

P.E. Bagnoli

Keyword(s):

Silicon Nitride ◽

Optoelectronic Device ◽

Compound Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Interfaces

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Oxide/III-V Compound Semiconductor Interfaces

Physics and Chemistry of III-V Compound Semiconductor Interfaces ◽

10.1007/978-1-4684-4835-1_7 ◽

1985 ◽

pp. 403-462 ◽

Cited By ~ 42

Author(s):

C. W. Wilmsen

Keyword(s):

Compound Semiconductor ◽

Semiconductor Interfaces

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New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

MRS Proceedings ◽

10.1557/proc-148-103 ◽

1989 ◽

Vol 148 ◽

Author(s):

L. J. Brillson ◽

R. E. Viturro ◽

S. Chang ◽

J. L. Shaw ◽

C. Mailhiot ◽

...

Keyword(s):

Compound Semiconductor ◽

Photoemission Spectroscopy ◽

Dominant Effect ◽

Band Bending ◽

X Ray ◽

Barrier Heights ◽

Semiconductor Interfaces ◽

Cathodoluminescence Spectroscopy ◽

Wide Range ◽

Spectroscopy Studies

ABSTRACTRecent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.

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