scholarly journals Kinetics of silicide formation by thin films of V on Si and SiO2 substrates

1974 ◽  
Vol 45 (8) ◽  
pp. 3304-3308 ◽  
Author(s):  
H. Kräutle ◽  
M‐A. Nicolet ◽  
J. W. Mayer
Keyword(s):  
Thin Films ◽  
Silicide Formation ◽  
Kinetics Of

Inhomogeneous Broadening of Photoluminescence Spectra and Kinetics of Nanometer-Thick (Phenethylammonium)2PbI4 Perovskite Thin Films: Implications for Optoelectronics

2021 ◽  
Author(s):  
Vladimir S. Chirvony ◽  
Isaac Suárez ◽  
Jesús Rodríguez-Romero ◽  
Rubén Vázquez-Cárdenas ◽  
Jesus Sanchez-Diaz ◽  
...  
Keyword(s):  
Thin Films ◽  
Inhomogeneous Broadening ◽  
Photoluminescence Spectra ◽  
Kinetics Of

Fast oxygen exchange kinetics of pore-free Bi1−xSrxFeO3−δ thin films

2011 ◽  
Vol 13 (37) ◽  
pp. 16530 ◽  
Author(s):  
Anja Wedig ◽  
Rotraut Merkle ◽  
Benjamin Stuhlhofer ◽  
Hanns-Ulrich Habermeier ◽  
Joachim Maier ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Exchange ◽  
Exchange Kinetics ◽  
Kinetics Of

Investigation of electrodeposition kinetics of In, Sb, and Zn for advanced designing of InSb and ZnSb thin films

2020 ◽  
pp. 114967
Author(s):  
Dominika Rajska ◽  
Agnieszka Brzózka ◽  
Katarzyna E. Hnida-Gut ◽  
Grzegorz D. Sulka
Keyword(s):  
Thin Films ◽  
Kinetics Of

scholarly journals Influence of Heterointerfaces on the Kinetics of Oxygen Surface Exchange on Epitaxial La1.85Sr0.15CuO4 Thin Films

2021 ◽  
Vol 11 (9) ◽  
pp. 3778
Author(s):  
Gene Yang ◽  
So-Yeun Kim ◽  
Changhee Sohn ◽  
Jong K. Keum ◽  
Dongkyu Lee
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Elevated Temperatures ◽  
Surface Exchange ◽  
Electrical Conductivity Relaxation ◽  
Exchange Kinetics ◽  
Relaxation Curves ◽  
Kinetics Of ◽  
Oxygen Surface Exchange ◽  
Oxygen Surface

Considerable attention has been directed to understanding the influence of heterointerfaces between Ruddlesden–Popper (RP) phases and ABO3 perovskites on the kinetics of oxygen electrocatalysis at elevated temperatures. Here, we report the effect of heterointerfaces on the oxygen surface exchange kinetics by employing heteroepitaxial oxide thin films formed by decorating LaNiO3 (LNO) on La1.85Sr0.15CuO4 (LSCO) thin films. Regardless of LNO decoration, tensile in-plane strain on LSCO films does not change. The oxygen surface exchange coefficients (kchem) of LSCO films extracted from electrical conductivity relaxation curves significantly increase with partial decorations of LNO, whereas full LNO coverage leads to the reduction in the kchem of LSCO films. The activation energy for oxygen exchange in LSCO films significantly decreases with partial LNO decorations in contrast with the full coverage of LNO. Optical spectroscopy reveals the increased oxygen vacancies in the partially covered LSCO films relative to the undecorated LSCO film. We attribute the enhanced oxygen surface exchange kinetics of LSCO to the increased oxygen vacancies by creating the heterointerface between LSCO and LNO.

scholarly journals Kinetics of nanoring formation on surfaces of stressed thin films

2018 ◽  
Vol 2 (8) ◽  
Author(s):  
Lin Du ◽  
Mikhail Khenner ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Kinetics Of

Kinetics of Deposition of Cu Thin Films in Supercritical Carbon Dioxide Solutions from a F-Free Copper(II) β-Diketone Complex

2009 ◽  
Vol 156 (6) ◽  
pp. H443 ◽  
Author(s):  
Masahiro Matsubara ◽  
Michiru Hirose ◽  
Kakeru Tamai ◽  
Yukihiro Shimogaki ◽  
Eiichi Kondoh
Keyword(s):  
Thin Films ◽  
Carbon Dioxide ◽  
Supercritical Carbon Dioxide ◽  
Kinetics Of ◽  
Supercritical Carbon

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

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