Highly selective argon–oxygen ion beam etching process for Pb alloys

1985 ◽  
Vol 3 (4) ◽  
pp. 1844-1848 ◽  
Author(s):  
D. F. Moore ◽  
H. P. Dietrich ◽  
A. W. Kleinsasser ◽  
J. M. E. Harper
Keyword(s):  
Ion Beam ◽  
Etching Process ◽  
Ion Beam Etching ◽  
Oxygen Ion

Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process

2000 ◽  
Vol 76 (14) ◽  
pp. 1899-1901 ◽  
Author(s):  
O. Breitschädel ◽  
J. T. Hsieh ◽  
B. Kuhn ◽  
F. Scholz ◽  
H. Schweizer
Keyword(s):  
Ion Beam ◽  
Etching Process ◽  
Ion Beam Etching

Fabrication of ramp-type junctions using a two angle ion beam etching process

1999 ◽  
Vol 12 (11) ◽  
pp. 1016-1019 ◽  
Author(s):  
U Schoop ◽  
M Schonecke ◽  
S Schymon ◽  
T Bauch ◽  
A Marx ◽  
...  
Keyword(s):  
Ion Beam ◽  
Etching Process ◽  
Ion Beam Etching

Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1235-1241 ◽  
Author(s):  
Masakazu Sugiyama ◽  
Takayuki Yamaizumi ◽  
Masahiro Nezuka ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano ◽  
...  
Keyword(s):  
Kinetic Model ◽  
Ion Beam ◽  
Etching Process ◽  
Ion Beam Etching ◽  
Simple Kinetic Model ◽  
Reactive Ion Beam Etching

Diamond Nanopit Arrays Fabricated by Room-Temperature Nanoimprinting using Diamond Molds

2011 ◽  
Vol 1282 ◽  
Author(s):  
Shuji Kiyohara ◽  
Masaya Kumagai ◽  
Yoshio Taguchi ◽  
Yoshinari Sugiyama ◽  
Yukiko Omata ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Ion Beam Etching ◽  
Minimum Diameter ◽  
Oxygen Ion ◽  
Pressure Time ◽  
Chemical Vapor Deposited

ABSTRACTWe have investigated the nanopatterning of chemical vapor deposited (CVD) diamond films in room-temperature nanoimprint lithography (RT-NIL), using a diamond nanodot mold. We have proposed the use of polysiloxane as an electron beam (EB) mask and RT-imprint resist materials. The diamond molds of cylinder dot using the RT-NIL process were fabricated with polysiloxane oxide mask in EB lithography technology. The dot in minimum diameter is 500 nm. The pitch between the dots is 2 μm, and dot has a height of about 600 nm. It was found that the optimum imprinting conditions for the RT-NIL : time from spin-coating to imprinting t1 of 1 min , pressure time t2 of 5 min, imprinting pressure P of 0.5 MPa. The imprint depth obtained after the press under their conditions was 500 nm. We carried out the RT-NIL process for the fabrication of diamond nanopit arrays, using the diamond nanodot molds that we developed. The resulting diamond nanopit arrays with 500 nm-diameter and 200 nm-depth after the electron cyclotron resonance (ECR) oxygen ion beam etching were fabricated. The diameter of diamond nanopit arrays was in good agreement with that of the diamond nanodot mold.

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