Diamond Nanopit Arrays Fabricated by Room-Temperature Nanoimprinting using Diamond Molds

2011 ◽  
Vol 1282 ◽  
Author(s):  
Shuji Kiyohara ◽  
Masaya Kumagai ◽  
Yoshio Taguchi ◽  
Yoshinari Sugiyama ◽  
Yukiko Omata ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Ion Beam Etching ◽  
Minimum Diameter ◽  
Oxygen Ion ◽  
Pressure Time ◽  
Chemical Vapor Deposited

ABSTRACTWe have investigated the nanopatterning of chemical vapor deposited (CVD) diamond films in room-temperature nanoimprint lithography (RT-NIL), using a diamond nanodot mold. We have proposed the use of polysiloxane as an electron beam (EB) mask and RT-imprint resist materials. The diamond molds of cylinder dot using the RT-NIL process were fabricated with polysiloxane oxide mask in EB lithography technology. The dot in minimum diameter is 500 nm. The pitch between the dots is 2 μm, and dot has a height of about 600 nm. It was found that the optimum imprinting conditions for the RT-NIL : time from spin-coating to imprinting t1 of 1 min , pressure time t2 of 5 min, imprinting pressure P of 0.5 MPa. The imprint depth obtained after the press under their conditions was 500 nm. We carried out the RT-NIL process for the fabrication of diamond nanopit arrays, using the diamond nanodot molds that we developed. The resulting diamond nanopit arrays with 500 nm-diameter and 200 nm-depth after the electron cyclotron resonance (ECR) oxygen ion beam etching were fabricated. The diameter of diamond nanopit arrays was in good agreement with that of the diamond nanodot mold.

Fabrication of Diamond Nanopit arrays by Room-temperature Curing Nanoimprint Lithography Using Glass-like Carbon Molds

2012 ◽  
Vol 1395 ◽  
Author(s):  
Shuji Kiyohara ◽  
Chigaya Ito ◽  
Ippei Ishikawa ◽  
Hirofumi Takikawa ◽  
Yoshio Taguchi ◽  
...  
Keyword(s):  
Diamond Film ◽  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Mold Material ◽  
Oxygen Ion ◽  
Mask Material ◽  
Chemical Vapor Deposited ◽  
Etching Selectivity

ABSTRACTWe have proposed the use of glass-like carbon (GC), as mold material because the 27-maximum etching selectivity of polysiloxane film against GC, which was approximately sixtimes larger than that of polysiloxane film against chemical vapor deposited (CVD) diamond film. We have investigated the fabrication of diamond nanopit arrays by room-temperature curing nanoimprint lithography (RTC-NIL) using GC mold, as applications to the emitter and the micro-gear. The polysiloxane has in the state of sticky liquid at room-temperature and negative-exposure characteristic. Therefore, the polysiloxane was used as RTC-imprint resist material, and also used as electron beam (EB) resist (oxide mask) material in EB lithography. We have fabricated the cylindrical GC nanodot mold with 500 nm-diameter, 600 nm-height and 2 μm-pitch. We carried out RTC-NIL using GC mold under the following optimum conditions: time from spin-coating to imprint of 1 min, imprinting pressure of 0.5 MPa and imprinting time of 5min. Then, we have processed the diamond film with an electron cyclotron resonance (ECR) oxygen ion shower. We have fabricated diamond nanopit array with 250 nm-depth and 500 nm-diameter. The diameter of diamond nanopit pattern was in good agreement with that of GC mold. Moreover, the depth of the diamond nanopit patterns fabricated by RTC-NIL using cylindrical GC mold was three times larger than that using conical diamond mold.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Near-Infrared Spectroscopy with a Dispersive Waveguide Device

1997 ◽  
Vol 51 (6) ◽  
pp. 880-882 ◽  
Author(s):  
Brian R. Stallard ◽  
Robert K. Rowe ◽  
Arnold J. Howard ◽  
G. Ronald Hadley ◽  
Gregory A. Vawter ◽  
...  
Keyword(s):  
Near Infrared ◽  
Low Cost ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Discrete Source ◽  
Ethanol Solution ◽  
Organic Chemical ◽  
Ion Beam Etching ◽  
Spectral Dispersion ◽  
Metal Organic

Miniature, low-cost sensors are in demand for a variety of applications in industry, medicine, and environmental sciences. As a first step in developing such a sensor, we have etched a grating into a GaAs rib waveguide to serve as a wavelength-dispersive element. The device was fabricated with the techniques of metal-organic chemical vapor deposition, electron-beam lithography, optical lithography, and reactive ion-beam etching. While full integration is the eventual goal of this work, for the present, a functional spectrometer was constructed with the addition of a discrete source, sample cell, lenses, and detector. The waveguide spectrometer has a spectral resolution of 7.5 nm and a spectral dispersion of 0.11°/ nm. As presently configured, it functions in the spectral range of 1500 to 1600 nm. A demonstration of the analytical capability of the waveguide spectrometer is presented. The problem posed is the determination of diethanol amine in an ethanol solution (about 10 to 100 g/L). This procedure involves the detection of the first overtone of the NH stretch at 1545 nm in a moderately absorbing solvent background. The standard error of prediction for the determination was 5.4 g/L.

scholarly journals Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
W. J. Liu ◽  
L. Chen ◽  
P. Zhou ◽  
Q. Q. Sun ◽  
H. L. Lu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Room Temperature ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Memory Device ◽  
Water Molecules ◽  
Oh Groups ◽  
Chemical Vapor Deposited ◽  
A Charge

We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

Composition dependence of room temperature 1.54μm Er3+ luminescence from erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

1997 ◽  
Vol 486 ◽  
Author(s):  
Jung H. Shin ◽  
Mun-Jun Kim ◽  
Se-Young Seo ◽  
Choochon Lee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Composition Dependence ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Resonance Plasma

AbstractThe composition dependence of room temperature 1.54 μ Er3+ photoluminescence of erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with Si:O ratio of 1:1.2 after 900 °C anneal and formation of silicon nanoclusters embedded in SiO2 matrix. High active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.

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