Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process

O. Breitschädel; J. T. Hsieh; B. Kuhn; F. Scholz; H. Schweizer

doi:10.1063/1.126205

Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process

Applied Physics Letters ◽

10.1063/1.126205 ◽

2000 ◽

Vol 76 (14) ◽

pp. 1899-1901 ◽

Cited By ~ 6

Author(s):

O. Breitschädel ◽

J. T. Hsieh ◽

B. Kuhn ◽

F. Scholz ◽

H. Schweizer

Keyword(s):

Ion Beam ◽

Etching Process ◽

Ion Beam Etching

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Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4767123 ◽

2012 ◽

Vol 30 (6) ◽

pp. 06FA01 ◽

Cited By ~ 4

Author(s):

Sung-Woo Chun ◽

Daehong Kim ◽

Jihun Kwon ◽

Bongho Kim ◽

Hyungyu Lee ◽

...

Keyword(s):

Electron Beam ◽

Tunnel Junctions ◽

Ion Beam ◽

Magnetic Tunnel Junctions ◽

Etching Process ◽

Ion Beam Etching ◽

Hard Mask

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Novel Josephson Integrated Circuit Technology Based on Selective Trilayer Ion-Beam Etching Process

10.7567/ssdm.1985.c-1-8 ◽

1985 ◽

Author(s):

T. Yoshida ◽

H. Tsuge

Keyword(s):

Integrated Circuit ◽

Ion Beam ◽

Etching Process ◽

Ion Beam Etching ◽

Circuit Technology

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Fabrication of ramp-type junctions using a two angle ion beam etching process

Superconductor Science and Technology ◽

10.1088/0953-2048/12/11/396 ◽

1999 ◽

Vol 12 (11) ◽

pp. 1016-1019 ◽

Cited By ~ 3

Author(s):

U Schoop ◽

M Schonecke ◽

S Schymon ◽

T Bauch ◽

A Marx ◽

...

Keyword(s):

Ion Beam ◽

Etching Process ◽

Ion Beam Etching

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Sacrificial ion beam etching process for seed layer removal of 6 μm pitch CuSn micro bumps

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/41/1/012005 ◽

2012 ◽

Vol 41 ◽

pp. 012005

Author(s):

J Hess ◽

H Vogt

Keyword(s):

Seed Layer ◽

Ion Beam ◽

Etching Process ◽

Ion Beam Etching ◽

Layer Removal

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Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1235 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 1235-1241 ◽

Cited By ~ 3

Author(s):

Masakazu Sugiyama ◽

Takayuki Yamaizumi ◽

Masahiro Nezuka ◽

Yukihiro Shimogaki ◽

Yoshiaki Nakano ◽

...

Keyword(s):

Kinetic Model ◽

Ion Beam ◽

Etching Process ◽

Ion Beam Etching ◽

Simple Kinetic Model ◽

Reactive Ion Beam Etching

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Highly selective argon–oxygen ion beam etching process for Pb alloys

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.573389 ◽

1985 ◽

Vol 3 (4) ◽

pp. 1844-1848 ◽

Cited By ~ 4

Author(s):

D. F. Moore ◽

H. P. Dietrich ◽

A. W. Kleinsasser ◽

J. M. E. Harper

Keyword(s):

Ion Beam ◽

Etching Process ◽

Ion Beam Etching ◽

Oxygen Ion

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Selective Trilayer Ion-Beam Etching Process for Fabricating Nb/Nb Oxide/Pb-Alloy Tunnel Junctions

Advances in Cryogenic Engineering Materials ◽

10.1007/978-1-4613-9871-4_67 ◽

1986 ◽

pp. 565-572

Author(s):

H. Tsuge

Keyword(s):

Tunnel Junctions ◽

Ion Beam ◽

Etching Process ◽

Ion Beam Etching

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Semitransparent TiO2 nanotube arrays with both ends open by electrochemical anodization and ion-beam etching process

Materials Research Express ◽

10.1088/2053-1591/aad528 ◽

2018 ◽

Vol 5 (9) ◽

pp. 095021

Author(s):

Venkatachalam Shanmugam ◽

D Mangalaraj ◽

H Hayashi ◽

H Nanjo

Keyword(s):

Ion Beam ◽

Tio2 Nanotube Arrays ◽

Tio2 Nanotube ◽

Etching Process ◽

Electrochemical Anodization ◽

Nanotube Arrays ◽

Ion Beam Etching

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The effect of ion beam etching process on laser damage resistance of fused silica

9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies ◽

10.1117/12.2505146 ◽

2019 ◽

Author(s):

Ma ping ◽

Yan dingyao ◽

Huang jinyong ◽

He xiang ◽

Wang Gang ◽

...

Keyword(s):

Ion Beam ◽

Fused Silica ◽

Etching Process ◽

Laser Damage ◽

Ion Beam Etching ◽

Damage Resistance

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Characteristics of Nb-based tunnel junctions fabricated by selective trilayer ion-beam etching process

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583675 ◽

1987 ◽

Vol 5 (6) ◽

pp. 1569

Author(s):

H. Tsuge

Keyword(s):

Tunnel Junctions ◽

Ion Beam ◽

Etching Process ◽

Ion Beam Etching

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