scholarly journals Summary Abstract: Localization of superlattice electronic states and complex bulk band structures

1980 ◽  
Vol 17 (5) ◽  
pp. 1118-1119 ◽  
Author(s):  
J. N. Schulman ◽  
T. C. McGill
Keyword(s):  
Electronic States ◽  
Band Structures ◽  
Bulk Band

A broadband, self-biased photodiode based on antimony telluride (Sb2Te3) nanocrystals/silicon heterostructures

Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 15003-15009 ◽  
Author(s):  
Asish Parbatani ◽  
Eui Sang Song ◽  
Fan Yang ◽  
Bin Yu
Keyword(s):  
Topological Insulators ◽  
Electronic States ◽  
Band Gaps ◽  
Antimony Telluride ◽  
Next Generation ◽  
Conductive Surface ◽  
Silicon Heterostructures ◽  
Bulk Band

Low bulk band gaps and conductive surface electronic states of tetradymite topological insulators (TTI) make them potential candidates for next generation ultra-broadband photodevices.

Luminescence of Direct and Indirect Gap Quantum Semiconductor Crystallites

1992 ◽  
Vol 272 ◽  
Author(s):  
L. E. Brus
Keyword(s):  
Quantum Dots ◽  
Size Effect ◽  
Band Gap ◽  
Three Dimensional ◽  
Electronic States ◽  
Quantum Size Effect ◽  
Excited Electronic States ◽  
Quantum Size ◽  
Quantum Semiconductor ◽  
Bulk Band

Semiconductor crystallites (“quantum dots”) small with respect to the bulk exciton Bohr diameter show a three dimensional electronic quantum size effect. Their internal excited electronic states are discrete and shifted to higher energy than the bulk band gap[1,2].

Bulk Band Structures

1999 ◽  
pp. 150-165
Author(s):  
Weng W. Chow ◽  
Stephan W. Koch
Keyword(s):  
Band Structures ◽  
Bulk Band

CHEMISORPTION OF Sb ON III-V(110) SURFACES

1994 ◽  
Vol 01 (04) ◽  
pp. 677-680
Author(s):  
G.P. SRIVASTAVA
Keyword(s):  
Band Gap ◽  
Standing Wave ◽  
Density Of States ◽  
Layer Structure ◽  
Electronic States ◽  
Interface States ◽  
X Ray ◽  
Self Consistent ◽  
Photoemission Data ◽  
Bulk Band

We present a self-consistent pseudopotential study of the atomic geometry, electronic states, and chemisorption of ordered one and two monolayers of Sb on III-V(110) surfaces. For the first monolayer the Sb atoms chemisorb most strongly in the epitaxially continued layer structure (ECLS). The calculated interface atomic geometry agrees well with LEED and X-ray standing wave analyses, and the interface states in the bulk band gap agree with recent photoemission data. For ordered two monolayers in the ECLS the interface shows a metal-like density of states in the band gap.

Topological bulk band structures of the hourglass and Dirac nodal-loop types in Ce Kondo systems: CeNiSn, CeRhAs, and CeRhSb

2019 ◽  
Vol 99 (12) ◽  
Author(s):  
T.-S. Nam ◽  
Chang-Jong Kang ◽  
D.-C. Ryu ◽  
Junwon Kim ◽  
Heejung Kim ◽  
...  
Keyword(s):  
Band Structures ◽  
Kondo Systems ◽  
Bulk Band

Topological insulator states in a honeycomb lattice of s-triazines

Nanoscale ◽  
2014 ◽  
Vol 6 (19) ◽  
pp. 11157-11162 ◽  
Author(s):  
Aizhu Wang ◽  
Xiaoming Zhang ◽  
Mingwen Zhao
Keyword(s):  
Topological Insulator ◽  
Electronic States ◽  
Topological Invariant ◽  
Honeycomb Lattice ◽  
Chemical Formula ◽  
Band Structures

The already-synthesized honeycomb lattice of s-triazines with a chemical formula C6N6 has topologically nontrivial electronic states characterized by px,y-orbital band structures with a topological invariant of Z2 = 1.

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