A broadband, self-biased photodiode based on antimony telluride (Sb2Te3) nanocrystals/silicon heterostructures

Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 15003-15009 ◽  
Author(s):  
Asish Parbatani ◽  
Eui Sang Song ◽  
Fan Yang ◽  
Bin Yu
Keyword(s):  
Topological Insulators ◽  
Electronic States ◽  
Band Gaps ◽  
Antimony Telluride ◽  
Next Generation ◽  
Conductive Surface ◽  
Silicon Heterostructures ◽  
Bulk Band

Low bulk band gaps and conductive surface electronic states of tetradymite topological insulators (TTI) make them potential candidates for next generation ultra-broadband photodevices.

Tailoring plasmon excitations in α − T3 armchair nanoribbons

2021 ◽  
Author(s):  
Andrii Iurov ◽  
Liubov Zhemchuzhna ◽  
Godfrey Gumbs ◽  
Danhong Huang ◽  
Paula Fekete ◽  
...  
Keyword(s):  
Energy Gap ◽  
Graphene Nanoribbons ◽  
Electronic States ◽  
Landau Damping ◽  
Next Generation ◽  
Polarization Function ◽  
Edge Termination

Abstract We have calculated and investigated the electronic states, dynamical polarization function and the plasmon excitations for α − T3 nanoribbons with armchair-edge termination. The obtained plasmon dispersions are found to depend significantly on the number of atomic rows across the ribbon and the energy gap which is also determined by the nanoribbon geometry. The bandgap appears to have the strongest effect on both the plasmon dispersions and their Landau damping. We have determined the conditions when relative hopping parameter α of an α − T3 lattice has a strong effect on the plasmons which makes our material distinguished from graphene nanoribbons. Our results for the electronic and collective properties of α − T3 nanoribbons are expected to find numerous applications in the development of the next-generation electronic, nano-optical and plasmonic devices.

scholarly journals Photon dressed electronic states in topological insulators: tunneling and conductance

2013 ◽  
Vol 25 (13) ◽  
pp. 135502 ◽  
Author(s):  
Andrii Iurov ◽  
Godfrey Gumbs ◽  
Oleksiy Roslyak ◽  
Danhong Huang
Keyword(s):  
Topological Insulators ◽  
Electronic States

scholarly journals Hosting of surface states in spin–orbit induced projected bulk band gaps of W(1 1 0) and Ir(1 1 1)

2017 ◽  
Vol 29 (25) ◽  
pp. 255001 ◽  
Author(s):  
H J Elmers ◽  
D Kutnyakhov ◽  
S V Chernov ◽  
K Medjanik ◽  
O Fedchenko ◽  
...  
Keyword(s):  
Surface States ◽  
Band Gaps ◽  
Spin Orbit ◽  
Bulk Band

scholarly journals Tailoring plasmon excitations in $$\alpha -{\mathcal {T}}_3$$ armchair nanoribbons

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Andrii Iurov ◽  
Liubov Zhemchuzhna ◽  
Godfrey Gumbs ◽  
Danhong Huang ◽  
Paula Fekete ◽  
...  
Keyword(s):  
Energy Gap ◽  
Graphene Nanoribbons ◽  
Electronic States ◽  
Landau Damping ◽  
Next Generation ◽  
Polarization Function ◽  
Edge Termination

AbstractWe have calculated and investigated the electronic states, dynamical polarization function and the plasmon excitations for $$\alpha -{\mathcal {T}}_3$$ α - T 3 nanoribbons with armchair-edge termination. The obtained plasmon dispersions are found to depend significantly on the number of atomic rows across the ribbon and the energy gap which is also determined by the nanoribbon geometry. The bandgap appears to have the strongest effect on both the plasmon dispersions and their Landau damping. We have determined the conditions when relative hopping parameter $$\alpha $$ α of an $$\alpha -{\mathcal {T}}_3$$ α - T 3 lattice has a strong effect on the plasmons which makes our material distinguished from graphene nanoribbons. Our results for the electronic and collective properties of $$\alpha -{\mathcal {T}}_3$$ α - T 3 nanoribbons are expected to find numerous applications in the development of the next-generation electronic, nano-optical and plasmonic devices.

Luminescence of Direct and Indirect Gap Quantum Semiconductor Crystallites

1992 ◽  
Vol 272 ◽  
Author(s):  
L. E. Brus
Keyword(s):  
Quantum Dots ◽  
Size Effect ◽  
Band Gap ◽  
Three Dimensional ◽  
Electronic States ◽  
Quantum Size Effect ◽  
Excited Electronic States ◽  
Quantum Size ◽  
Quantum Semiconductor ◽  
Bulk Band

Semiconductor crystallites (“quantum dots”) small with respect to the bulk exciton Bohr diameter show a three dimensional electronic quantum size effect. Their internal excited electronic states are discrete and shifted to higher energy than the bulk band gap[1,2].

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