Generation of interface states at the silicon/oxide interface due to hot‐electron injection

1993 ◽  
Vol 74 (12) ◽  
pp. 7364-7368 ◽  
Author(s):  
H. Wong ◽  
Y. C. Cheng
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Interface States ◽  
Hot Electron ◽  
Oxide Interface ◽  
Hot Electron Injection

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

scholarly journals Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

2021 ◽  
Vol 24 (3) ◽  
pp. 1367
Author(s):  
Yasuhisa Omura
Keyword(s):  
Oxide Film ◽  
Resistive Switching ◽  
Silicon Oxide ◽  
Electron Injection ◽  
Hot Electron ◽  
Dissipation Energy ◽  
Silicon Oxide Film ◽  
Hot Electron Injection ◽  
Sputter Deposited ◽  
The Impact

<p>This paper considers the contribution of hot electrons to the resistive switching of sputter-deposited silicon oxide films based on experiments together with semi-2D Monte Carlo simulations. Using various device stack structures, this paper examines the impact of hot-electron injection on resistive switching, where conduction-band offset and fermi-level difference are utilized. Support is found for the predictions that hot-electron injection reduces the switching voltage and this should reduce the dissipation energy of switching. It is predicted that two-layer metal stacks can significantly reduce the number of oxygen vacancies in the sputter-deposited silicon oxide film after the reset process. It is also demonstrated that, in unipolar switching, the number of E’ or E” centers of the sputter-deposited silicon oxide film is relatively large.</p>

Electron Induced Depassivation Of H And D Terminated Si/Si02 Interfaces

1996 ◽  
Vol 446 ◽  
Author(s):  
R. A. B. Devine ◽  
W. L. Warren ◽  
K. Vanheusden ◽  
C. Mourrain ◽  
M‐J. Bouzid
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Electron Injection ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Hot Electron ◽  
Electrical Measurements ◽  
Hot Electron Injection ◽  
Spin Resonance

AbstractWe have performed electron spin resonance and electrical measurements on SiO2/Si structures subjected to anneals in 5% H2/N2 or 5% D2/N2 gases and subsequently injected with electrons using corona ions and ultra‐violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25 μm metal‐oxide‐semiconductor transistors subjected to 400 °C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO2/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on Pb, trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable us to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements we have made, the transistor ageing resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behaviour between the SiO2/Si structures and the 0.25 μm transistors are suggested.

Rectification in Chiral Carbon Nanotubes with Hot Electron Injection

2020 ◽  
Vol 131 (3) ◽  
pp. 456-459
Author(s):  
S. S. Abukari ◽  
R. Musah ◽  
M. Amekpewu ◽  
S. Y. Mensah ◽  
N. G. Mensah ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Chiral Carbon

scholarly journals Simulation of GaAs submicron FET with hot-electron injection structure

1983 ◽  
Vol 19 (17) ◽  
pp. 697 ◽  
Author(s):  
K. Tomizawa ◽  
Y. Awano ◽  
N. Hashizume ◽  
M. Kawashima
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection
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