High rate reactive ion etching of Al2O3 and Si

Neil Heiman; Vincent Minkiewicz; Brian Chapman

doi:10.1116/1.570550

High rate reactive ion etching of Al2O3 and Si

Journal of Vacuum Science and Technology ◽

10.1116/1.570550 ◽

1980 ◽

Vol 17 (3) ◽

pp. 731-734 ◽

Cited By ~ 12

Author(s):

Neil Heiman ◽

Vincent Minkiewicz ◽

Brian Chapman

Keyword(s):

Reactive Ion Etching ◽

High Rate ◽

Ion Etching

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High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

Applied Physics Letters ◽

10.1063/1.124986 ◽

1999 ◽

Vol 75 (15) ◽

pp. 2268-2270 ◽

Cited By ~ 108

Author(s):

F. A. Khan ◽

I. Adesida

Keyword(s):

Inductively Coupled Plasma ◽

Reactive Ion Etching ◽

Gas Mixtures ◽

High Rate ◽

Ion Etching ◽

Inductively Coupled

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Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal SiC substrates

10.17760/d1001875x ◽

2008 ◽

Author(s):

Zhaohui Chen

Keyword(s):

Single Crystal ◽

Reactive Ion Etching ◽

Barium Hexaferrite ◽

High Rate ◽

Ion Etching ◽

Single Crystal Sic

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High-Rate Reactive Ion Etching of SiO2Using a Magnetron Discharge

Japanese Journal of Applied Physics ◽

10.1143/jjap.20.l817 ◽

1981 ◽

Vol 20 (11) ◽

pp. L817-L820 ◽

Cited By ~ 31

Author(s):

Yasuhiro Horiike ◽

Haruo Okano ◽

Takashi Yamazaki ◽

Hiromichi Horie

Keyword(s):

Reactive Ion Etching ◽

High Rate ◽

Magnetron Discharge ◽

Ion Etching

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High Rate And Selective Reactive Ion Etching Of Polysilicon

10.1117/12.978051 ◽

1990 ◽

Author(s):

L. Y. Tsou

Keyword(s):

Reactive Ion Etching ◽

High Rate ◽

Ion Etching

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High rate reactive ion etching using a magnetron discharge

Microelectronics Reliability ◽

10.1016/0026-2714(83)90485-7 ◽

1983 ◽

Vol 23 (2) ◽

pp. 405-406

Keyword(s):

Reactive Ion Etching ◽

High Rate ◽

Magnetron Discharge ◽

Ion Etching

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Smooth and high-rate reactive ion etching of diamond

Diamond and Related Materials ◽

10.1016/s0925-9635(01)00617-3 ◽

2002 ◽

Vol 11 (3-6) ◽

pp. 824-827 ◽

Cited By ~ 97

Author(s):

Yutaka Ando ◽

Yoshiki Nishibayashi ◽

Koji Kobashi ◽

Takashi Hirao ◽

Kenjiro Oura

Keyword(s):

Reactive Ion Etching ◽

High Rate ◽

Ion Etching

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Anomalous High Rate Reactive Ion Etching Process for Indium Tin Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l629 ◽

1997 ◽

Vol 36 (Part 2, No. 5B) ◽

pp. L629-L631 ◽

Cited By ~ 8

Author(s):

Yue Kuo

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Reactive Ion Etching ◽

Etching Process ◽

High Rate ◽

Ion Etching

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High Rate Reactive Ion Etching of Copper Films in SiCl4, N2, Cl2 and NH3 Mixture

10.7567/ssdm.1990.c-3-5 ◽

1990 ◽

Cited By ~ 2

Author(s):

Kazuhide Ohno ◽

Masaaki Sato ◽

Yoshinobu Arita

Keyword(s):

Reactive Ion Etching ◽

High Rate ◽

Copper Films ◽

Ion Etching

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Special issue on semiconductors - Materials and processing technologies. High rate reactive ion etching.

Journal of the Japan Society of Precision Engineering ◽

10.2493/jjspe1933.51.1310 ◽

1985 ◽

Vol 51 (7) ◽

pp. 1310-1313

Author(s):

YASUHIRO HORIIKE

Keyword(s):

Reactive Ion Etching ◽

High Rate ◽

Special Issue ◽

Ion Etching ◽

Processing Technologies

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Reactive ion etching lag on high rate oxide etching using high density plasma

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588006 ◽

1995 ◽

Vol 13 (6) ◽

pp. 2390 ◽

Cited By ~ 16

Author(s):

Takeshi Akimoto

Keyword(s):

Reactive Ion Etching ◽

High Density ◽

High Rate ◽

Ion Etching ◽

Oxide Etching ◽

Density Plasma

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