Step coverage of rf‐diode‐sputtered SiO2 films

1980 ◽  
Vol 17 (2) ◽  
pp. 582-586 ◽  
Author(s):  
T. Serikawa
Keyword(s):  
Sio2 Films ◽  
Step Coverage

The Formation Mechanism and Step Coverage Quality of Tetraethylorthosilicate ‐ SiO2 Films Studied by the Micro/Macrocavity Method

1993 ◽  
Vol 140 (10) ◽  
pp. 2952-2959 ◽  
Author(s):  
Tetsuji Sorita ◽  
Satoru Shiga ◽  
Kazuyuki Ikuta ◽  
Yasuyuki Egashira ◽  
Hiroshi Komiyama
Keyword(s):  
Formation Mechanism ◽  
Sio2 Films ◽  
Step Coverage ◽  
Coverage Quality

scholarly journals MECHANISM OF STEP COVERAGE FORMATION OF SiO2 FILMS FROM TEOS AND EFFECTS OF GAS PHASE ADDITIVES STUDIED BY MICRO/MACROCAVITY METHOD

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-55-C2-61
Author(s):  
Y. EGASHIRA ◽  
T. SORITA ◽  
S. SHIGA ◽  
K. IKUTA ◽  
H. KOMIYAMA
Keyword(s):  
Gas Phase ◽  
Sio2 Films ◽  
Step Coverage

X-ray photoelectron spectroscopy insights on interfaces between SiO2 films and GaN substrates: differences due to depositional technique

2020 ◽  
Vol 59 (9) ◽  
pp. 090902
Author(s):  
Noritake Isomura ◽  
Narumasa Soejima ◽  
Tomohiko Mori ◽  
Satoshi Ikeda ◽  
Atsushi Watanabe ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Sio2 Films ◽  
X Ray

Development of the structure of thin SiO2 films during thermal growth on Si substrate

1993 ◽  
Vol 22 (1-4) ◽  
pp. 39-42 ◽  
Author(s):  
I.P. Lisovskii ◽  
V.G. Litovchenko ◽  
V.V. Khatko
Keyword(s):  
Si Substrate ◽  
Sio2 Films ◽  
Thermal Growth

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Dielectric breakdown caused by hole-induced-defect in thin SiO2 films

1997 ◽  
Vol 117-118 ◽  
pp. 245-248 ◽  
Author(s):  
Akinobu Teramoto ◽  
Kiyoteru Kobayashi ◽  
Yasuji Matsui ◽  
Makoto Hirayama
Keyword(s):  
Dielectric Breakdown ◽  
Sio2 Films
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