scholarly journals MECHANISM OF STEP COVERAGE FORMATION OF SiO2 FILMS FROM TEOS AND EFFECTS OF GAS PHASE ADDITIVES STUDIED BY MICRO/MACROCAVITY METHOD

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-55-C2-61
Author(s):  
Y. EGASHIRA ◽  
T. SORITA ◽  
S. SHIGA ◽  
K. IKUTA ◽  
H. KOMIYAMA
Keyword(s):  
Gas Phase ◽  
Sio2 Films ◽  
Step Coverage

The Formation Mechanism and Step Coverage Quality of Tetraethylorthosilicate ‐ SiO2 Films Studied by the Micro/Macrocavity Method

1993 ◽  
Vol 140 (10) ◽  
pp. 2952-2959 ◽  
Author(s):  
Tetsuji Sorita ◽  
Satoru Shiga ◽  
Kazuyuki Ikuta ◽  
Yasuyuki Egashira ◽  
Hiroshi Komiyama
Keyword(s):  
Formation Mechanism ◽  
Sio2 Films ◽  
Step Coverage ◽  
Coverage Quality

IR spectra of SiO2 films deposited from the gas phase

1991 ◽  
Vol 55 (2) ◽  
pp. 753-757
Author(s):  
T. V. Sidorenko ◽  
N. N. Syrbu ◽  
O. V. Nikulin ◽  
V. D. Prilepov ◽  
N. M. Oliferenko
Keyword(s):  
Ir Spectra ◽  
Gas Phase ◽  
Sio2 Films

Low Temperature Chemical Vapor Deposition of Silicon-rich Tungsten Silicide Films from Tungsten Hexafluoride - Disilane Pre-activated Mixtures

2012 ◽  
Vol 10 (1) ◽  
Author(s):  
Takeyasu Saito ◽  
Keiji Oshima ◽  
Yukihiro Shimogaki ◽  
Yasuyuki Egashira ◽  
Katsuro Sugawara ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Active Species ◽  
Sticking Probability ◽  
Reactor Wall ◽  
Radical Chain ◽  
Tungsten Silicide ◽  
Step Coverage

Abstract Kinetics of chemical vapor deposition (CVD) of silicon-rich tungsten silicide films from WF6/Si2H6 mixtures was investigated as a function of the configuration of a hot-wall tubular reactor. The step coverage within micron-sized trenches was analyzed to determine the overall sticking probability, which is the ratio between the film-forming species deposited on a surface and the flux of that species to the surface. The overall sticking probability was found in the range 0.01 - 0.30 as the deposition temperature was varied from 120 to 360°C. The activation energy was 25 kJ/mol. These sticking probabilities were lower than those for CVD of tungsten silicide film from WF6/SiH4 mixtures, which yielded better step-coverage profiles. The extinction temperature, Tex, below which no deposition was observed, ranged from 70 ‹ Tex ‹ 80°C. Tex = 70°C corresponded to an inner reactor diameter, d, of 22 mm, and Tex = 80°C corresponded to d = 11 mm. The dependence of Tex on d strongly suggests that radical chain reactions are involved in the CVD process. The reaction producing active intermediate species occurs in the gas phase and these active species are consumed on the surface of the reactor wall. Therefore, the volume to surface ratio of the reactor may be the key factor to control Tex, and an increase in d leads to a decrease in Tex. For Tex = 80°C, pre-heating of the gas phase can be used to induce the chain reaction and increase the silicon content in the tungsten silicide films.

Investigation of Gas Phase Species and Deposition of SiO2 Films from HMDSO/O2 Plasmas

2006 ◽  
Vol 3 (3) ◽  
pp. 276-287 ◽  
Author(s):  
Dattatray S. Wavhal ◽  
Jianming Zhang ◽  
Michelle L. Steen ◽  
Ellen R. Fisher
Keyword(s):  
Gas Phase ◽  
Sio2 Films

The Impact of Gas Phase and Surface Chemical Reactions on Step Coverage in Lpcvd

1993 ◽  
Vol 334 ◽  
Author(s):  
Gregory B. Raupp ◽  
Timothy S. Cale
Keyword(s):  
Gas Phase ◽  
Chemical Reactions ◽  
Ballistic Transport ◽  
Film Surface ◽  
Wafer Surface ◽  
Process Conditions ◽  
Surface Chemical ◽  
Step Coverage ◽  
Surface Chemical Reactions ◽  
The Impact

AbstractThe characteristic step coverage behavior which a given LPCVD process exhibits depends on the nature of the controlling gas phase and/or surface chemical reactions. Physically-based ballistic transport and reaction film profile evolution simulation has provided a structure wherein the origins of step coverage limitations can be understood in the context of the interaction of transport and the controlling chemistry. Based on comparisons of the simulations to literature and in-house experimental data, we have categorized LPCVD mechanisms into one of three types. In heterogeneous deposition, conformal step coverage can usually be found under at least some process conditions. Step coverage typically degrades with increasing deposition temperature. In homogeneous precursor-mediateddeposition, a reactive intermediate is formed in the gas-phase above the wafer surface, resulting in poor to moderate step coverage. Step coverage may or may not degrade with increasing temperature. In byproduct-inhibited deposition, a gas-phase byproduct generated via a surface reaction readsorbs on the growing film surface and slows the deposition rate, yielding a poor to moderate, relatively temperature-insensitive step coverage. Poor step coverage is manifested in a marked film thickness discontinuity at the feature mouth, with a relatively uniform film down the feature sidewalls.

Residual Gas Reactions in the Electron Microscope: I. Qualitative Observations on the Water Gas Reaction

1968 ◽  
Vol 26 ◽  
pp. 292-293
Author(s):  
Richard E. Hartman ◽  
Roberta S. Hartman ◽  
Peter L. Ramos
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Gas Phase ◽  
Absolute Temperature ◽  
Residual Gas ◽  
Gas Reactions ◽  
Image Position ◽  
The Right ◽  
Water Gas ◽  
Thinning Rate

The action of water and the electron beam on organic specimens in the electron microscope results in the removal of oxidizable material (primarily hydrogen and carbon) by reactions similar to the water gas reaction .which has the form:The energy required to force the reaction to the right is supplied by the interaction of the electron beam with the specimen.The mass of water striking the specimen is given by:where u = gH2O/cm2 sec, PH2O = partial pressure of water in Torr, & T = absolute temperature of the gas phase. If it is assumed that mass is removed from the specimen by a reaction approximated by (1) and that the specimen is uniformly thinned by the reaction, then the thinning rate in A/ min iswhere x = thickness of the specimen in A, t = time in minutes, & E = efficiency (the fraction of the water striking the specimen which reacts with it).

Integration of Core-Edge Spectroscopy Methods for the Study of Polymers

1996 ◽  
Vol 54 ◽  
pp. 154-155
Author(s):  
E. G. Rightor
Keyword(s):  
Excited State ◽  
Polymer Blends ◽  
Gas Phase ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Electronic States ◽  
Core Electron ◽  
Bulk Solids ◽  
Development Application

Core edge spectroscopy methods are versatile tools for investigating a wide variety of materials. They can be used to probe the electronic states of materials in bulk solids, on surfaces, or in the gas phase. This family of methods involves promoting an inner shell (core) electron to an excited state and recording either the primary excitation or secondary decay of the excited state. The techniques are complimentary and have different strengths and limitations for studying challenging aspects of materials. The need to identify components in polymers or polymer blends at high spatial resolution has driven development, application, and integration of results from several of these methods.

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