Directional oxygen‐ion‐beam etching of carbonaceous materials

1979 ◽  
Vol 16 (6) ◽  
pp. 1906-1908 ◽  
Author(s):  
P. D. DeGraff ◽  
D. C. Flanders
Keyword(s):  
Ion Beam ◽  
Carbonaceous Materials ◽  
Ion Beam Etching ◽  
Oxygen Ion

Highly selective argon–oxygen ion beam etching process for Pb alloys

1985 ◽  
Vol 3 (4) ◽  
pp. 1844-1848 ◽  
Author(s):  
D. F. Moore ◽  
H. P. Dietrich ◽  
A. W. Kleinsasser ◽  
J. M. E. Harper
Keyword(s):  
Ion Beam ◽  
Etching Process ◽  
Ion Beam Etching ◽  
Oxygen Ion

Diamond Nanopit Arrays Fabricated by Room-Temperature Nanoimprinting using Diamond Molds

2011 ◽  
Vol 1282 ◽  
Author(s):  
Shuji Kiyohara ◽  
Masaya Kumagai ◽  
Yoshio Taguchi ◽  
Yoshinari Sugiyama ◽  
Yukiko Omata ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Ion Beam Etching ◽  
Minimum Diameter ◽  
Oxygen Ion ◽  
Pressure Time ◽  
Chemical Vapor Deposited

ABSTRACTWe have investigated the nanopatterning of chemical vapor deposited (CVD) diamond films in room-temperature nanoimprint lithography (RT-NIL), using a diamond nanodot mold. We have proposed the use of polysiloxane as an electron beam (EB) mask and RT-imprint resist materials. The diamond molds of cylinder dot using the RT-NIL process were fabricated with polysiloxane oxide mask in EB lithography technology. The dot in minimum diameter is 500 nm. The pitch between the dots is 2 μm, and dot has a height of about 600 nm. It was found that the optimum imprinting conditions for the RT-NIL : time from spin-coating to imprinting t1 of 1 min , pressure time t2 of 5 min, imprinting pressure P of 0.5 MPa. The imprint depth obtained after the press under their conditions was 500 nm. We carried out the RT-NIL process for the fabrication of diamond nanopit arrays, using the diamond nanodot molds that we developed. The resulting diamond nanopit arrays with 500 nm-diameter and 200 nm-depth after the electron cyclotron resonance (ECR) oxygen ion beam etching were fabricated. The diameter of diamond nanopit arrays was in good agreement with that of the diamond nanodot mold.

Polyimide moth-eye nanostructures formed by oxygen ion beam etching for anti-reflection layers

2021 ◽  
pp. 111559
Author(s):  
Takao Okabe ◽  
Tomoya Yano ◽  
Katsuyuki Yatagawa ◽  
Jun Taniguchi
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Oxygen Ion

Surface Fluorination of Polyimide Thin Films by CF4 + O2 Reactive Ion Beam Etching

1986 ◽  
Vol 75 ◽  
Author(s):  
William E. Vanderlinde ◽  
Arthur L. Ruoff
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Atom Concentration ◽  
Oxygen Ion ◽  
Theoretical Predictions ◽  
Ion Current Density ◽  
Surface Fluorination ◽  
Reactive Ion Beam Etching

AbstractSurface fluorination of polyimide thin films during CF4 + O2 reactive ion beam etching (RIBE) was investigated. The removal of the fluorinated layer by a subsequent oxygen ion beam etch was also studied. Electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering spectrometry (RBS) detected a fluorinated surface layer on the order of 100 A thick. Fluorine atom concentration in the surface of the film (as measured by RBS) and the etch rate of the film were measured as a function of several experimental parameters: ion energy, ion current density, etch time, and gas composition. The results are compared with theoretical predictions of the total number of fluorine atoms retained in the film after etching.

scholarly journals Fabrication of Moth-eye Antireflective Nanostructures via Oxygen Ion-beam Etching on a UV-curable Polymer

2021 ◽  
Vol 34 (2) ◽  
pp. 133-138
Author(s):  
Takao Okabe ◽  
Katsuyuki Yatagawa ◽  
Kazuki Fujiwara ◽  
Jun Taniguchi
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Uv Curable ◽  
Oxygen Ion

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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