Measurements of interface recombination velocity by capacitance/collection efficiency variation in Cu2S/CdS heterojunctions

1979 ◽  
Vol 16 (5) ◽  
pp. 1402-1405 ◽  
Author(s):  
N. Convers Wyeth ◽  
A. Rothwarf
Keyword(s):  
Collection Efficiency ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

He+ ion damage in 4H-SiC studied by charge collection efficiency measurements.

2003 ◽  
Vol 792 ◽  
Author(s):  
Roberta Nipoti ◽  
Cesare Donolato
Keyword(s):  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Collection ◽  
Nuclear Microprobe ◽  
Ion Microprobe ◽  
Charge Collection Efficiency ◽  
Interface Recombination ◽  
Carrier Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

ABSTRACTThe nuclear microprobe facility of the Italian National Laboratories of Legnaro was used for an Ion Beam Induced Charge Collection (IBIC or IBICC) experiment which measured the charge collection of a 4H-SiC Schottky diode irradiated with 2 MeV He+ at increasing doses. The experiment was arranged so as to obtain a statistics of about 1400 events per each He+ ion from the 1st to the 500th one on the ion microprobe spot (1.5 × 1.5 μm2). These figures correspond to He+ fluence values in the range 107−1011 ions/cm2. The charge collection of the diode was almost constant from the 1st to the 10th He+ ion, i.e. up to a fluence of 109 ions/cm2, and then monotonically decreased for the subsequent ions. The SiC device collection efficiency was modelled by representing the electrical effects of the damage produced by ions as a planar interface region of given carrier recombination velocity at the depth of the damage peak. Experimental and computed data scale one to the other assuming that the interface recombination velocity and He+ fluence are linearly related.

The influence of sodium on the molybdenum/Cu(In,Ga)Se2 interface recombination velocity, determined by time resolved photoluminescence

2015 ◽  
Vol 107 (5) ◽  
pp. 051601 ◽  
Author(s):  
Enrico Jarzembowski ◽  
Frank Syrowatka ◽  
Kai Kaufmann ◽  
Wolfgang Fränzel ◽  
Torsten Hölscher ◽  
...  
Keyword(s):  
Time Resolved ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity ◽  
Time Resolved Photoluminescence

Measurement of carrier lifetime and interface recombination velocity in Si–Ge waveguides

2007 ◽  
Vol 91 (4) ◽  
pp. 041112 ◽  
Author(s):  
A. Trita ◽  
I. Cristiani ◽  
V. Degiorgio ◽  
D. Chrastina ◽  
H. von Känel
Keyword(s):  
Carrier Lifetime ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity

1995 ◽  
Vol 66 (5) ◽  
pp. 625-627 ◽  
Author(s):  
M. Passlack ◽  
M. Hong ◽  
E. F. Schubert ◽  
J. R. Kwo ◽  
J. P. Mannaerts ◽  
...  
Keyword(s):  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity
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