He+ ion damage in 4H-SiC studied by charge collection efficiency measurements.

2003 ◽  
Vol 792 ◽  
Author(s):  
Roberta Nipoti ◽  
Cesare Donolato
Keyword(s):  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Collection ◽  
Nuclear Microprobe ◽  
Ion Microprobe ◽  
Charge Collection Efficiency ◽  
Interface Recombination ◽  
Carrier Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

ABSTRACTThe nuclear microprobe facility of the Italian National Laboratories of Legnaro was used for an Ion Beam Induced Charge Collection (IBIC or IBICC) experiment which measured the charge collection of a 4H-SiC Schottky diode irradiated with 2 MeV He+ at increasing doses. The experiment was arranged so as to obtain a statistics of about 1400 events per each He+ ion from the 1st to the 500th one on the ion microprobe spot (1.5 × 1.5 μm2). These figures correspond to He+ fluence values in the range 107−1011 ions/cm2. The charge collection of the diode was almost constant from the 1st to the 10th He+ ion, i.e. up to a fluence of 109 ions/cm2, and then monotonically decreased for the subsequent ions. The SiC device collection efficiency was modelled by representing the electrical effects of the damage produced by ions as a planar interface region of given carrier recombination velocity at the depth of the damage peak. Experimental and computed data scale one to the other assuming that the interface recombination velocity and He+ fluence are linearly related.

scholarly journals The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Žydrūnas Podlipskas ◽  
Jonas Jurkevičius ◽  
Arūnas Kadys ◽  
Saulius Miasojedovas ◽  
Tadas Malinauskas ◽  
...  
Keyword(s):  
Cumulative Effect ◽  
Carrier Dynamics ◽  
Recombination Rates ◽  
Loss Mechanism ◽  
Recombination Mechanism ◽  
Interface Recombination ◽  
Carrier Recombination ◽  
Algan Barrier ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractCarrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire heterointerfaces with AlGaN barriers of different quality. We employ the light induced transient grating and time-resolved photoluminescence spectroscopy techniques to extract carrier lifetime in different depths of the GaN buffer as well as in the AlGaN barrier, and to evaluate the carrier diffusion coefficient in the buffer. Moreover, we assess interface recombination velocity, Shockley-Read-Hall and radiative recombination rates. We reveal the adverse barrier influence on carrier dynamics in the underlying buffer: AlGaN barrier accelerates the nonradiative carrier recombination in the GaN buffer. The interface recombination velocity in the GaN buffer increases with decreasing AlGaN barrier quality, and the dominating recombination mechanism switches from Shockley-Read-Hall to interface recombination. These phenomena are governed by a cumulative effect of various interface-deteriorating barrier defects. Meanwhile, the carrier diffusivity in the GaN buffer is not affected by the AlGaN barrier. We conclude that barrier-accelerated interface recombination can become a major carrier loss mechanism in AlGaN/GaN interface, and may substantially limit the efficiency in nitride-based UV LEDs.

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions

2007 ◽  
Vol 556-557 ◽  
pp. 913-916 ◽  
Author(s):  
Takeshi Ohshima ◽  
Takahiro Satoh ◽  
Masakazu Oikawa ◽  
Shinobu Onoda ◽  
Shigeomi Hishiki ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Ion Irradiation ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Transient Current ◽  
Charge Collection ◽  
Induced Current ◽  
Charge Collection Efficiency ◽  
Signal Peak ◽  
The Ideal

The charge generated in 6H-SiC n+p diodes by gold (Au) ion irradiation at an energy of 12 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). The signal peak of the transient current increases, and the fall-time decreases with increasing applied reverse bias. The value of collected charge experimentally obtained is smaller than the ideal value. The Charge Collection Efficiency (CCE) of 6H-SiC n+p diodes irradiated with Au ions is approximately 50 % in spite that the CCE of 100 % is obtained in the case of oxygen (O) ion irradiation.

Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

2008 ◽  
Vol 600-603 ◽  
pp. 1043-1046 ◽  
Author(s):  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Shigeomi Hishiki ◽  
Takeshi Ohshima ◽  
Makoto Murakami ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Electron Irradiation ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Collection ◽  
Radiation Tolerance ◽  
Induced Current ◽  
Charge Collection Efficiency ◽  
Significant Change ◽  
P Type

6H-SiC n+p diodes fabricated on a p-type epitaxial layer were irradiated with 1MeV-electrons at fluences up to 6×1016 cm-2 to clarify their radiation tolerance. Charge Collection Efficiencies (CCEs) were evaluated from the Transient Ion Beam Induced Current (TIBIC) using Oxygen (O) ions. The CCE of 93 % was obtained for non-electron-irradiated diodes, and no significant change in CCE was observed for diodes irradiated with electrons at fluences below 1×1015 cm-2. The degradation of CCE was observed after irradiation at fluences above 5×1015 cm-2.

CHARACTERISTICS OF CVD DIAMOND FILMS IN DETECTING UV, X-RAY AND ALPHA PARTICLE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1018-1023 ◽  
Author(s):  
J. AHN ◽  
B. GAN ◽  
Q. ZHANG ◽  
S. F. YOON ◽  
V. LIGATCHEV ◽  
...  
Keyword(s):  
Visible Light ◽  
Alpha Particle ◽  
Uv Light ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Response Speed ◽  
Cvd Diamond ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray

The CVD diamond UV photodetector shows more than four orders of photoresponsivity discrimination between UV and visible light. Post-treatment on as-fabricated photodetector is essential for a good response to UV light and blindness to visible light. The CVD diamond X-ray detector shows linear dependence of photocurrent on X-ray intensity and high response speed. The mapping of charge collection efficiency on the whole sensing area of a CVD diamond alpha particle detector has been obtained using ion-beam-induced charge microscopy technique. Three peaks have been observed in the charge collection spectrum.

scholarly journals Ion Microprobe Study of the Polarization Quenching Techniques in Single Crystal Diamond Radiation Detectors

Materials ◽  
2022 ◽  
Vol 15 (1) ◽  
pp. 388
Author(s):  
Mauricio R. Ramos ◽  
Andreo Crnjac ◽  
Donny Cosic ◽  
Milko Jakšić
Keyword(s):  
Single Crystal ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Extreme Environments ◽  
Chemical Vapor ◽  
Radiation Detectors ◽  
Nuclear Microprobe ◽  
Charge Collection Efficiency ◽  
Single Crystal Diamond ◽  
Vapor Deposition Technique

Synthetic single crystal diamond grown using the chemical vapor deposition technique constitutes an extraordinary candidate material for monitoring radiation in extreme environments. However, under certain conditions, a progressive creation of space charge regions within the crystal can lead to the deterioration of charge collection efficiency. This phenomenon is called polarization and represents one of the major drawbacks associated with using this type of device. In this study, we explore different techniques to mitigate the degradation of signal due to polarization. For this purpose, two different diamond detectors are characterized by the ion beam-induced charge technique using a nuclear microprobe, which utilizes MeV energy ions of different penetration depths to probe charge transport in the detectors. The effect of polarization is analyzed by turning off the bias applied to the detector during continuous or discontinuous irradiation, and also by alternating bias polarity. In addition, the beneficial influence of temperature for reducing the effect of polarization is also observed. Finally, the effect of illuminating the detector with light is also measured. Our experimental results indicate that heating a detector or turning off the bias, and then applying it during continuous irradiation can be used as satisfactory methods for recovering the CCE value close to that of a prepolarized state. In damaged regions, illumination with white light can be used as a standard method to suppress the strength of polarization induced by holes.

Barrier Effect of Retrograde Well Against Ion-Induced-Charge Carriers

1993 ◽  
Vol 316 ◽  
Author(s):  
Hirokazu Sayama ◽  
Takehisa Kishimoto ◽  
Mikio Takai ◽  
Hiroshi Kimura ◽  
Yoshikazu Ohno ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Carriers ◽  
Charge Collection ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Charge Collection Efficiency ◽  
Mev Protons ◽  
Good Agreement

ABSTRACTThe charge collection efficiency of a diode with a retrograde well was estimated using focused ion beam irradiation at 400 keV and 2 MeV. The retrograde well was found to effectively suppress a collection of charge carriers created by energetic particles. The charge collection efficiency of the diode with the retrograde well was ~ 25 % lower than that with the conventional well when 400 keV ~ 2 MeV protons were irradiated normal to diodes. This result was in good agreement with device simulation.

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  
Keyword(s):  
Radiation Damage ◽  
3D Imaging ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Spatial Mapping ◽  
Charge Collection Efficiency ◽  
Silicon Sensor
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