In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity

1995 ◽  
Vol 66 (5) ◽  
pp. 625-627 ◽  
Author(s):  
M. Passlack ◽  
M. Hong ◽  
E. F. Schubert ◽  
J. R. Kwo ◽  
J. P. Mannaerts ◽  
...  
Keyword(s):  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

The influence of sodium on the molybdenum/Cu(In,Ga)Se2 interface recombination velocity, determined by time resolved photoluminescence

2015 ◽  
Vol 107 (5) ◽  
pp. 051601 ◽  
Author(s):  
Enrico Jarzembowski ◽  
Frank Syrowatka ◽  
Kai Kaufmann ◽  
Wolfgang Fränzel ◽  
Torsten Hölscher ◽  
...  
Keyword(s):  
Time Resolved ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity ◽  
Time Resolved Photoluminescence

Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Passlack ◽  
M. Hong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
In Situ Deposition ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractWe have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.

Measurement of carrier lifetime and interface recombination velocity in Si–Ge waveguides

2007 ◽  
Vol 91 (4) ◽  
pp. 041112 ◽  
Author(s):  
A. Trita ◽  
I. Cristiani ◽  
V. Degiorgio ◽  
D. Chrastina ◽  
H. von Känel
Keyword(s):  
Carrier Lifetime ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity
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