Thin film compositional analysis—a comparison of techniques

1975 ◽  
Vol 12 (1) ◽  
pp. 144-150 ◽  
Author(s):  
Charles A. Evans
Keyword(s):  
Thin Film ◽  
Compositional Analysis ◽  
Comparison Of Techniques

scholarly journals Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography

2020 ◽  
Vol 117 (23) ◽  
pp. 232103
Author(s):  
Jith Sarker ◽  
Tinh Binh Tran ◽  
Feras AlQatari ◽  
Che-Hao Liao ◽  
Xiaohang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Atom Probe Tomography ◽  
Compositional Analysis ◽  
Atom Probe

Highly dense and compositionally inhomogeneous nano-agglomerates in an epitaxial La0.8Sr0.2MnO3 thin film grown on (100)SrTiO3

2005 ◽  
Vol 20 (3) ◽  
pp. 571-579 ◽  
Author(s):  
Y.L. Zhu ◽  
X.L. Ma ◽  
D.X. Li ◽  
H.B. Lu ◽  
Z.H. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Colossal Magnetoresistance ◽  
Molecular Beam ◽  
Compositional Analysis ◽  
Salient Feature ◽  
Dark Field ◽  
Orientation Relationships ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Field Imaging

Microstructures in the thin film of La0.8Sr0.2MnO3 grown on (100) SrTiO3 by laser molecular beam epitaxy were characterized by transmission electron microscopy. Highly dense and dimensionally uniform nano-agglomerates were found embedded in thin film of La0.8Sr0.2MnO3. High-angle angular dark-field imaging, elemental mapping, and compositional analysis revealed that the nano-agglomerates are rich in manganese and poor in lanthanum. The ratio of Mn/La in the nano-agglomerates fluctuates. A salient feature of this compositional fluctuation within the nanoscale isthe formation of cubic MnO phase, which appears as the core of the nano-agglomerates.The La0.8Sr0.2MnO3 film is domain-oriented and two domains were identified on the basis of orthorhombic lattice. The orientation relationships between La0.8Sr0.2MnO3 domains and MnO were determined as [010]LSMO,1//[001]MnO and (100)LSMO,1//(110)MnO; [101]LSMO,2//[001]MnO and (010)LSMO,2//(100)MnO. The domain structuresand compositional inhomogeneities within nanoscale result in a textured microstructure, which is one of the most important parameters for tuning electronic properties in colossal magnetoresistance oxides.

Spatially Resolved Compositional Analysis of a BCN Thin Film Grown on a Ni Substrate by Chemical Vapor Deposition

2012 ◽  
Vol 1451 ◽  
pp. 151-156
Author(s):  
Satoru Suzuki ◽  
Hiroki Hibino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Compositional Analysis ◽  
Chemical Vapor ◽  
Ni Substrate ◽  
Spatially Resolved ◽  
Highly Correlated ◽  
Nitrogen Contents

ABSTRACTA thin film consisting of boron, carbon, and nitrogen (BCN) was grown on a polycrystalline Ni substrate by thermal chemical vapor deposition. The local elemental composition of the BCN film was analyzed by scanning Auger electron spectroscopy. The film is elementally highly inhomogeneous and consists of domains with a typical size of 1-10 μm and irregular shapes. The domain structure is strongly related to the structure of the grains of the polycrystalline Ni film beneath the domain. A thick domain is often formed on a small Ni grain. On a large and flat Ni grain, the film thickness is relatively small, and both the boron and nitrogen contents are often below the detection limit, indicating that it is a graphene domain. Boron and nitrogen contents are highly correlated, which is consistent with formation of hexagonal boron nitride. However, unbalanced boron and nitrogen contents are observed from thick domains.

scholarly journals Investigation of CdZnTe for Thin-Film Tandem Solar Cell Applications

2003 ◽  
Vol 763 ◽  
Author(s):  
Ramesh Dhere ◽  
Tim Gessert ◽  
Jie Zhou ◽  
Sally Asher ◽  
Joel Pankow ◽  
...  
Keyword(s):  
Thin Film ◽  
Compositional Analysis ◽  
Film Deposition ◽  
Alloy Formation ◽  
Device Performance ◽  
Radio Frequency Sputtering ◽  
Heat Treated ◽  
Zn Content ◽  
Effect Of Oxygen ◽  
Deposited Films

AbstractModeling of two-junction tandem devices shows that for optimal device performance, the bandgap of the top cell should be around 1.6-1.8 eV. CdZnTe alloys can be tailored to yield bandgaps in the desired range. In this study, three approaches were used to fabricate these films. The CdTe and ZnTe films were deposited by close-spaced sublimation (CSS) and radio-frequency sputtering (RFS) techniques respectively. In the first approach, we used mixed powders of CdTe and ZnTe as the source for film deposition by CSS. Even for the ZnTe/CdTe (95:5 ratio) source material, the deposited films were entirely CdTe due to higher vapor pressure of CdTe. In the second approach, we used pre-alloyed CdZnTe powders (CERAC, Inc.) as the source. Due to the lower sticking coefficient of Zn, even for the source composition of 75% Zn, these films contained very low quantities of Zn (∼5%). We tried unsuccessfully to increase the Zn content in the films by confining Zn vapor by enclosing the region between the source and substrate, reducing the substrate temperature to 400°C, and adjusting the source/substrate distance. Finally, we used thin-film couples consisting of 300-nm-thick CdTe deposited by CSS and 300-nm-thick ZnTe deposited by RFS; the samples were then heat-treated in cadmium chloride vapor. Compositional analysis of the samples showed extensive interdiffusion of Cd and Zn for the annealed samples. We will present the data on the various stack configurations of CdTe and ZnTe, the effect of different post-deposition anneals, the effect of oxygen on the interdiffusion and alloy formation and its possible correlation to the device performance degradation.

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