Spatially Resolved Compositional Analysis of a BCN Thin Film Grown on a Ni Substrate by Chemical Vapor Deposition

2012 ◽  
Vol 1451 ◽  
pp. 151-156
Author(s):  
Satoru Suzuki ◽  
Hiroki Hibino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Compositional Analysis ◽  
Chemical Vapor ◽  
Ni Substrate ◽  
Spatially Resolved ◽  
Highly Correlated ◽  
Nitrogen Contents

ABSTRACTA thin film consisting of boron, carbon, and nitrogen (BCN) was grown on a polycrystalline Ni substrate by thermal chemical vapor deposition. The local elemental composition of the BCN film was analyzed by scanning Auger electron spectroscopy. The film is elementally highly inhomogeneous and consists of domains with a typical size of 1-10 μm and irregular shapes. The domain structure is strongly related to the structure of the grains of the polycrystalline Ni film beneath the domain. A thick domain is often formed on a small Ni grain. On a large and flat Ni grain, the film thickness is relatively small, and both the boron and nitrogen contents are often below the detection limit, indicating that it is a graphene domain. Boron and nitrogen contents are highly correlated, which is consistent with formation of hexagonal boron nitride. However, unbalanced boron and nitrogen contents are observed from thick domains.

Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition

Nano Letters ◽  
2010 ◽  
Vol 10 (10) ◽  
pp. 4134-4139 ◽  
Author(s):  
Yumeng Shi ◽  
Christoph Hamsen ◽  
Xiaoting Jia ◽  
Ki Kang Kim ◽  
Alfonso Reina ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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