scholarly journals Aluminum metallization of III–V semiconductors for the study of proximity superconductivity

2020 ◽  
Vol 38 (3) ◽  
pp. 032212 ◽  
Author(s):  
Wendy L. Sarney ◽  
Stefan P. Svensson ◽  
Asher C. Leff ◽  
William F. Schiela ◽  
Joseph O. Yuan ◽  
...  
Keyword(s):  
Aluminum Metallization

Texture and Microstructure Effects on Electromigration Behavior of Aluminum Metallization

1991 ◽  
Vol 225 ◽  
Author(s):  
D. B. Knorr ◽  
K. P. Rodbell ◽  
D. P. Tracy
Keyword(s):  
Grain Size ◽  
Standard Deviation ◽  
Pure Aluminum ◽  
Time To Failure ◽  
X Ray Diffraction ◽  
Aluminum Films ◽  
Failure Data ◽  
Transmission Electron ◽  
Aluminum Metallization ◽  
Microstructure Effects

ABSTRACTPure aluminum films are deposited under a variety of conditions to vary the crystallographic texture. After patterning and annealing at 400°C for 1 hour, electromigration tests are performed at several temperatures. Failure data are compared on the basis of t50 and standard deviation. Microstructure is quantified by transmission electron microscopy for grain size and grain size distribution and by X-ray diffraction for texture. A strong (111) texture significantly improves the electromigration lifetime and decreases the standard deviation in time to failure. This improvement correlates with both the fraction and sharpness of the (111) texture component.

Void formation mechanism in VLSI aluminum metallization

1989 ◽  
Vol 36 (6) ◽  
pp. 1050-1055 ◽  
Author(s):  
K. Hinode ◽  
I. Asano ◽  
Y. Homma
Keyword(s):  
Formation Mechanism ◽  
Void Formation ◽  
Aluminum Metallization

Laser projection patterned aluminum metallization for integrated circuit applications

1987 ◽  
Vol 50 (12) ◽  
pp. 766-768 ◽  
Author(s):  
G. E. Blonder ◽  
G. S. Higashi ◽  
C. G. Fleming
Keyword(s):  
Integrated Circuit ◽  
Aluminum Metallization

Thermo-mechanically induced texture evolution and micro-structural change of aluminum metallization

2017 ◽  
Vol 29 (5) ◽  
pp. 3898-3904 ◽  
Author(s):  
Mads Brincker ◽  
Thomas Walter ◽  
Peter K. Kristensen ◽  
Vladimir N. Popok
Keyword(s):  
Structural Change ◽  
Texture Evolution ◽  
Aluminum Metallization

A study of barium strontium titanate thin films for use in bypass capacitors

1998 ◽  
Vol 13 (1) ◽  
pp. 197-204 ◽  
Author(s):  
B. A. Baumert ◽  
L-H. Chang ◽  
A. T. Matsuda ◽  
C. J. Tracy ◽  
N. G. Cave ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Aluminum Metallization ◽  
On Chip ◽  
Lower Temperature ◽  
Kinetics Of

Physical and electrical characterization techniques have been applied to the problem of developing a lower temperature process for spin-on Ba0.7Sr0.3TiO3 thin films and capacitors compatible with on-chip aluminum metallization. The films were prepared by spin-coating from carboxylate precursors and were processed at temperatures between 650 °C and 450 °C. Capacitors annealed at higher temperatures have a dielectric constant (κ) of 382, a C/A of 20 fF/μm2, and a leakage current density of 2 × 10−7 A/cm2 at 3.3 V. Those processed at 450 °C show occasionally promising but inconsistent results, correlated using TEM images with locally variable crystallization into the perovskite phase. The kinetics of the spin-on solution chemical decomposition and crystallization has been investigated through the use of x-ray diffraction (XRD), thermogravimetric analysis (TGA), and Raman spectroscopy.

ZrN Diffusion Barrier in Aluminum Metallization Schemes

1982 ◽  
Vol 18 ◽  
Author(s):  
L. Krusin-Elbaum ◽  
M. Wittmer ◽  
C.-Y. Ting ◽  
J. J. Cuomo
Keyword(s):  
Grain Size ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Barrier Properties ◽  
Metal Nitrides ◽  
X Ray ◽  
Annealing Temperatures ◽  
Fine Grain ◽  
Transmission Electron ◽  
Aluminum Metallization

We have studied reactively sputtered ZrN, the most thermally stable of the refractory metal nitrides, for its diffusion barrier properties in aluminum metallization schemes with Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). We find this compound to be very effective against aluminum diffusion up to 500 °C, independently of substrate temperature during sputtering. The useful temperature range can be extended by 50 °C with proper preannealing prior to aluminum deposition. The TEM study of the ZrN grain size as a function of annealing temperature revealed that the grain size does not change significantly upon annealing and that the grains are relatively small even at the highest annealing temperatures (about 300 Å at 900 °C). In addition, for annealing temperatures of and below 500 °C large portions of ZrN films were found to be of either amorphous or extremely fine–grain material, thus inhibiting the diffusion along grain boundaries. The presence of Zr3Al4Si5 ternary compound in samples annealed at 600 °C, as determined by X-ray analysis, may suggest that the ZrN barrier fails by decomposition of the film by aluminum.

Consecutive Selective Chemical Vapor Deposition of Copper and Aluminum from Organometallic Precursors

1992 ◽  
Vol 282 ◽  
Author(s):  
Stephen M. Fine ◽  
Paul N. Dyer ◽  
John A. T. Norman
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rapid Thermal Anneal ◽  
Aluminum Metallization ◽  
Barrier Surface ◽  
Aluminum Deposition ◽  
Organometallic Precursors ◽  
Copper Aluminum

ABSTRACTFor the next generation of integrated microcircuits, there exists a need in the electronics industry for high conductivity, electromigration resistant metallization that can be deposited selectivity by chemical vapor deposition techniques. This paper describes a new process for depositing copper/aluminum metallization selectively onto diffusion barrier surfaces in two consecutive steps. First copper is selectively deposited by OMCVD ontoa patterned diffusion barrier surface using a Cu(I)(hfac)(olefin) precursor. Selective copper deposition onto tungsten or titanium nitride is achieved at 150°C and 100 mtorr. Aluminum is then selectively deposited onto copper using trimethylaminealane as the OMCVDprecursor. Trimethylaminealane gives good selectivity for aluminum deposition onto coppersurfaces over a temperature range of 100–120°C without the use of a surface activating agent. A small amount of copper diffuses into the as deposited aluminum layer atthe low deposition temperature. Complete diffusion of copper into aluminum is achieved by a rapid thermal anneal at a higher temperature. The selectivity of aluminum deposition onto copper surfaces is far superior to that observed for aluminum deposition onto other metal surfaces.

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