Void formation mechanism in VLSI aluminum metallization

1989 ◽  
Vol 36 (6) ◽  
pp. 1050-1055 ◽  
Author(s):  
K. Hinode ◽  
I. Asano ◽  
Y. Homma
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Fei Chong Ng ◽  
Mohd Hafiz Zawawi ◽  
Mohamad Aizat Abas

Purpose The purpose of the study is to investigate the spatial aspects of underfill flow during the flip-chip encapsulation process, for instance, meniscus evolution and contact line jump (CLJ). Furthermore, a spatial-based void formation mechanism during the underfill flow was formulated. Design/methodology/approach The meniscus evolution of underfill fluid subtended between the bump array and the CLJ phenomenon were visualized numerically using the micro-mesh unit cell approach. Additionally, the meniscus evolution and CLJ phenomenon were modelled analytically based on the formulation of capillary physics. Meanwhile, the mechanism of void formation was explained numerically and analytically. Findings Both the proposed analytical and current numerical findings achieved great consensus and were well-validated experimentally. The variation effects of bump pitch on the spatial aspects were analyzed and found that the meniscus arc radius and filling distance increase with the pitch, while the subtended angle of meniscus arc is invariant with the pitch size. For larger pitch, the jump occurs further away from the bump entrance and takes longer time to attain the equilibrium meniscus. This inferred that the concavity of meniscus arc was influenced by the bump pitch. On the voiding mechanism, air void was formed from the air entrapment because of the fluid-bump interaction. Smaller voids tend to merge into a bigger void through necking and, subsequently, propagate along the underfill flow. Practical implications The microscopic spatial analysis of underfill flow would explain fundamentally how the bump design will affect the macroscopic filling time. This not only provides alternative visualization tool to analyze flow pattern in the industry but also enables the development of accurate analytical filling time model. Moreover, the void formation mechanism gave substantial insights to understand the root causes of void defects and allow possible solutions to be formulated to tackle this issue. Additionally, the microfluidics sector could also benefit from these spatial analysis insights. Originality/value Spatial analysis on underfill flow is scarcely conducted, as the past research studies mainly emphasized on the temporal aspects. Additionally, this work presented a new mechanism on the void formation based on the fluid-bump interaction, in which the formation and propagation of micro-voids were numerically visualized for the first time. The findings from current work provided fundamental information on the flow interaction between underfill fluid and solder bump to the package designers for optimization work and process enhancement.


2017 ◽  
Vol 34 (1) ◽  
pp. 40-44 ◽  
Author(s):  
Hao Zhang ◽  
Yang Liu ◽  
Fenglian Sun ◽  
Gaofang Ban ◽  
Jiajie Fan

Purpose This paper aimed to investigate the effects of nano-copper particles on the melting behaviors, wettability and defect formation mechanism of the Sn58Bi composite solder pastes. Design/methodology/approach In this paper, the mechanical stirring method was used to get the nano-composite solder pastes. Findings Experimental results indicated that the addition of 3 wt.% (weight percentage) 50 nm copper particles showed limited effects on the melting behaviors of the Sn58Bi composite solder paste. The spreading rate of the Sn58Bi composite solder paste showed a decreasing trend with the increase of the weight percentage of 50 nm copper particles from 0 to 3 wt.%. With the addition of copper particles of diameters 50 nm, 500 nm or 6.5 μm into the Sn58Bi solder paste, the porosities of the three types of solder pastes showed a similar trend. The porosity increased with the increase of the weight percentage of copper particles. Based on the experimental results, a model of the void formation mechanism was proposed. During reflow, the copper particles reacted with Sn in the matrix and formed intermetallic compounds, which gathered around the voids produced by the volatilization of flux. The exclusion of the voids was suppressed and eventually led to the formation of defects. Originality/value This study provides an optimized material for the second and third level packaging. A model of the void formation mechanism was proposed.


1997 ◽  
Vol 6 (1) ◽  
pp. 096369359700600
Author(s):  
Naoto Ikegawa ◽  
Hiroyuki Hamada ◽  
Zenichiro Maekawa

In order to analyze flow behavior of resin in the system with porous medium such as fibrous reinforcement for Structural Resin Transfer Molding (SRTM), equivalent viscosity according to a concept of homogenization method was introduced as an index of flow resistance. Numerical analysis using finite element method (FEM) was performed to clarify the void formation mechanism.


2021 ◽  
Author(s):  
Peidong Xu ◽  
Bin Wang ◽  
Yong Wang ◽  
Xiantao Wang

In this paper, the vacuum reflow soldering technology for semiconductor laser chips in optoelectronic devices was studied and analyzed in a systematic manner. Through the study on the key elements in the reflow soldering process, such as the selection of solders, <a>chamber</a> vacuum, flux, and the pressure applied by the fixture on the chip, this paper focused on exploring the formation mechanism of voids in the solder layer when the device was resoldered. Also, the change in the movement of gas bubbles in the voids with changing reflow oven chamber conditions and its underlying law were analyzed, by preparing 200 C-package semiconductor laser diodes and verifying the reliability and stability of the theoretical analysis through inspection and test aging. which could provide a theoretical basis for the use of the vacuum reflow soldering technology to reduce the void rate in the soldering process of devices.


2016 ◽  
Vol 2016 (1) ◽  
pp. 000638-000643
Author(s):  
Koji Tatsumi ◽  
Akio Sakai ◽  
Syunsuke Kawai ◽  
Takuma Katase ◽  
Takashi Miyazawa ◽  
...  

Abstract SnAg electroplating method is widely used in the formation of LF solder bump for flip chip connection. While electroplating is able to form void free solder bump in a suitable operating condition, void may occur suddenly when used in mass production. This study aims at understanding the gas source in the void of electroplated SnAg solder bumps and determining the manufacturing process factors which affect the void formation. There are various types of void formation mode. One mode is H2 gas generation on cathode surface during electroplating. Both the cross-sections of solder bumps, as well as an analysis data of the gas in the void taken by the TDS (Thermal Desorption Spectrometry) were evaluated. The cross-section of the solder bump which contains void due to the reflow process revealed the existence of several tens of nm to several μm size pits in the solder bump before reflow. TDS analysis indicates that the pits consisted of mainly H2O, H2 and the decomposition of organics. A possible void formation mechanism is the evaporation of H2 gas and the incorporated electrolyte solution in the bump by reflow. These pits in the solder were caused by various process parameters. One of the causes is due to the setting of the current density in the SnAg electroplating process being inappropriate. The current density should be adjusted corresponding to the electrolyte performance and bump design such as PR thickness, opening diameter and bump density. The computer simulation demonstrated that a thick PR limits the diffusion of the Sn2+ ions into via holes and having the current density too high causes a lack of Sn2+ ions on the cathode surface and causes H2 gas generation. The other mode of void formation is Ag displacement of the under bump metallization (UBM) surface in dwell time in the SnAg electrolyte solution before the start of plating. The adjustment of each process parameter can eliminate the source of the void and achieve a high reliability of SnAg bump formation.


2007 ◽  
Vol 515 (17) ◽  
pp. 6824-6826 ◽  
Author(s):  
Li Wang ◽  
Sima Dimitrijev ◽  
Jisheng Han ◽  
Jin Zou

2021 ◽  
Author(s):  
Peidong Xu ◽  
Bin Wang ◽  
Yong Wang ◽  
Xiantao Wang

In this paper, the vacuum reflow soldering technology for semiconductor laser chips in optoelectronic devices was studied and analyzed in a systematic manner. Through the study on the key elements in the reflow soldering process, such as the selection of solders, <a>chamber</a> vacuum, flux, and the pressure applied by the fixture on the chip, this paper focused on exploring the formation mechanism of voids in the solder layer when the device was resoldered. Also, the change in the movement of gas bubbles in the voids with changing reflow oven chamber conditions and its underlying law were analyzed, by preparing 200 C-package semiconductor laser diodes and verifying the reliability and stability of the theoretical analysis through inspection and test aging. which could provide a theoretical basis for the use of the vacuum reflow soldering technology to reduce the void rate in the soldering process of devices.


Sign in / Sign up

Export Citation Format

Share Document