scholarly journals Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO2

2020 ◽  
Vol 38 (2) ◽  
pp. 023001 ◽  
Author(s):  
Shuo Huang ◽  
Seungbo Shim ◽  
Sang Ki Nam ◽  
Mark J. Kushner
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
High Aspect Ratio

High Aspect Ratio Tilted Gratings Through Local Electric Field Modulation in Plasma Etching

2021 ◽  
Author(s):  
Zhitian Shi ◽  
Konstantins Jefimovs ◽  
Antonino La Magna ◽  
Marco Stampanoni ◽  
Lucia Romano
Keyword(s):  
Aspect Ratio ◽  
Electric Field ◽  
Plasma Etching ◽  
High Aspect Ratio ◽  
Local Electric Field ◽  
Field Modulation

Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation

2019 ◽  
Vol 37 (3) ◽  
pp. 031304 ◽  
Author(s):  
Shuo Huang ◽  
Chad Huard ◽  
Seungbo Shim ◽  
Sang Ki Nam ◽  
In-Cheol Song ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
High Aspect Ratio ◽  
Computational Investigation

scholarly journals Plasma Etching Pre-treatment for a TEM Lamella Preparation of 3D NAND with High Aspect Ratio

2021 ◽  
Author(s):  
Yu-Chih Chen ◽  
Bing-Chang Li ◽  
Pei-Ling Hsu ◽  
Tsung-Yi Lin ◽  
I-An Chen ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
High Aspect Ratio ◽  
Expected Number ◽  
Number Of Layers ◽  
High Etch Rate ◽  
Pre Treatment ◽  
Etching Parameters ◽  
Tem Lamella ◽  
Section Analysis

Abstract The 3D NAND sample with high aspect ratio (HAR) etched by plasma was investigated. By controlling the plasma etching parameters, a relatively high etch rate could be obtained. Moreover, with appropriately controlling the etch time, we could etch top region of HAR sample with expected number of layers, which could help us to completely analyze the high aspect ratio sample with TEM cross-section analysis, especially for the middle region of 3D NAND.

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