scholarly journals Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

2018 ◽  
Vol 36 (6) ◽  
pp. 061511 ◽  
Author(s):  
Michelle Marie S. Villamayor ◽  
Julien Keraudy ◽  
Tetsuhide Shimizu ◽  
Rommel Paulo B. Viloan ◽  
Robert Boyd ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Metal Ion ◽  
Substrate Bias

Low-Temperature Epitaxial Growth of CeO$_{\bf 2}$(110)/Si(100) Structure by Evaporation under Substrate Bias

1996 ◽  
Vol 35 (Part 2, No. 12B) ◽  
pp. L1685-L1688 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Yasuhiro Yamamoto ◽  
Masataka Satoh
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Substrate Bias

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical

Trisdimethylaminoantimony: a new Sb source for low temperature epitaxial growth of InSb

1994 ◽  
Vol 143 (1-2) ◽  
pp. 15-21 ◽  
Author(s):  
J. Shin ◽  
A. Verma ◽  
G.B. Stringfellow ◽  
R.W. Gedridge
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Partial Pressure ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Deposition Rate ◽  
Epitaxial Films ◽  
Similar Degree ◽  
Gas Mixture ◽  
Heavy Doping

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si

2007 ◽  
Vol 515 (22) ◽  
pp. 8250-8253 ◽  
Author(s):  
Koji Ueda ◽  
Ryo Kizuka ◽  
Hisashi Takeuchi ◽  
Atsushi Kenjo ◽  
Taizoh Sadoh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Substrate Orientation ◽  
Influence Of Substrate

scholarly journals Low temperature epitaxial growth of boron-doped silicon thin films

2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Doped Silicon

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy
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