Recent progress on low-temperature epitaxial growth of nitride semiconductors

2000 ◽  
Author(s):  
Qixin Guo ◽  
Mitsuhiro Nishio ◽  
Hiroshi Ogawa
Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 28
Author(s):  
Anastasios I. Tsiotsias ◽  
Nikolaos D. Charisiou ◽  
Ioannis V. Yentekakis ◽  
Maria A. Goula

CO2 methanation has recently emerged as a process that targets the reduction in anthropogenic CO2 emissions, via the conversion of CO2 captured from point and mobile sources, as well as H2 produced from renewables into CH4. Ni, among the early transition metals, as well as Ru and Rh, among the noble metals, have been known to be among the most active methanation catalysts, with Ni being favoured due to its low cost and high natural abundance. However, insufficient low-temperature activity, low dispersion and reducibility, as well as nanoparticle sintering are some of the main drawbacks when using Ni-based catalysts. Such problems can be partly overcome via the introduction of a second transition metal (e.g., Fe, Co) or a noble metal (e.g., Ru, Rh, Pt, Pd and Re) in Ni-based catalysts. Through Ni-M alloy formation, or the intricate synergy between two adjacent metallic phases, new high-performing and low-cost methanation catalysts can be obtained. This review summarizes and critically discusses recent progress made in the field of bimetallic Ni-M (M = Fe, Co, Cu, Ru, Rh, Pt, Pd, Re)-based catalyst development for the CO2 methanation reaction.


2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun

1994 ◽  
Vol 143 (1-2) ◽  
pp. 15-21 ◽  
Author(s):  
J. Shin ◽  
A. Verma ◽  
G.B. Stringfellow ◽  
R.W. Gedridge

SmartMat ◽  
2021 ◽  
Author(s):  
Yihe Wang ◽  
Shuo Sun ◽  
Jialin Zhang ◽  
Yu Li Huang ◽  
Wei Chen

2018 ◽  
Vol 36 (6) ◽  
pp. 061511 ◽  
Author(s):  
Michelle Marie S. Villamayor ◽  
Julien Keraudy ◽  
Tetsuhide Shimizu ◽  
Rommel Paulo B. Viloan ◽  
Robert Boyd ◽  
...  

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.


1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.


2007 ◽  
Vol 515 (22) ◽  
pp. 8250-8253 ◽  
Author(s):  
Koji Ueda ◽  
Ryo Kizuka ◽  
Hisashi Takeuchi ◽  
Atsushi Kenjo ◽  
Taizoh Sadoh ◽  
...  

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