Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography

2018 ◽  
Vol 36 (6) ◽  
pp. 06JL04 ◽  
Author(s):  
Claudia Lenk ◽  
Martin Hofmann ◽  
Tzvetan Ivanov ◽  
Ahmad Ahmad ◽  
Steve Lenk ◽  
...  
Keyword(s):  
Scanning Probe ◽  
Scanning Probe Lithography ◽  
Field Emitter ◽  
Gan Nanowires

Field emission scanning probe lithography with GaN nanowires on active cantilevers

2020 ◽  
Vol 38 (3) ◽  
pp. 032806
Author(s):  
Mahmoud Behzadirad ◽  
Ashwin K. Rishinaramangalam ◽  
Daniel Feezell ◽  
Tito Busani ◽  
Christoph Reuter ◽  
...  
Keyword(s):  
Field Emission ◽  
Scanning Probe ◽  
Scanning Probe Lithography ◽  
Gan Nanowires

Investigations on the positioning accuracy of the Nano Fabrication Machine (NFM-100)

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Jaqueline Stauffenberg ◽  
Ingo Ortlepp ◽  
Ulrike Blumröder ◽  
Denis Dontsov ◽  
Christoph Schäffel ◽  
...  
Keyword(s):  
Target Position ◽  
Repeated Measurements ◽  
Scanning Probe ◽  
Measuring System ◽  
Direct Drive ◽  
Positioning Accuracy ◽  
Scanning Probe Lithography ◽  
Nano Fabrication ◽  
Atomic Force ◽  
Acceleration And Deceleration

Abstract This contribution deals with the analysis of the positioning accuracy of a new Nano Fabrication Machine. This machine uses a planar direct drive system and has a positioning range up to 100 mm in diameter. The positioning accuracy was investigated in different movement scenarios, including phases of acceleration and deceleration. Also, the target position error of certain movements at different positions of the machine slider is considered. Currently, the NFM-100 is equipped with a tip-based measuring system. This Atomic Force Microscope (AFM) uses self-actuating and self-sensing microcantilevers, which can be used also for Field-Emission-Scanning-Probe-Lithography (FESPL). This process is capable of fabricating structures in the range of nanometres. In combination with the NFM-100 and its positioning range, nanostructures can be analysed and written in a macroscopic range without any tool change. However, the focus in this article is on the measurement and positioning accuracy of the tip-based measuring system in combination with the NFM-100 and is verified by repeated measurements. Finally, a linescan, realised using both systems, is shown over a long range of motion of 30 mm.

Scanning probe lithography tips with spring-on-tip designs: Analysis, fabrication, and testing

2005 ◽  
Vol 87 (5) ◽  
pp. 054102 ◽  
Author(s):  
Xuefeng Wang ◽  
Loren Vincent ◽  
David Bullen ◽  
Jun Zou ◽  
Chang Liu
Keyword(s):  
Scanning Probe ◽  
Scanning Probe Lithography

“Multipoint Force Feedback” Leveling of Massively Parallel Tip Arrays in Scanning Probe Lithography

Small ◽  
2015 ◽  
Vol 11 (35) ◽  
pp. 4526-4531 ◽  
Author(s):  
Hanaul Noh ◽  
Goo-Eun Jung ◽  
Sukhyun Kim ◽  
Seong-Hun Yun ◽  
Ahjin Jo ◽  
...  
Keyword(s):  
Force Feedback ◽  
Scanning Probe ◽  
Massively Parallel ◽  
Scanning Probe Lithography

scholarly journals Subwavelength Nanostructuring of Gold Films by Apertureless Scanning Probe Lithography Assisted by a Femtosecond Fiber Laser Oscillator

Nanomaterials ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 536 ◽  
Author(s):  
Ignacio Falcón Casas ◽  
Wolfgang Kautek
Keyword(s):  
Fiber Laser ◽  
Near Field ◽  
Diffraction Limit ◽  
High Repetition Rate ◽  
Scanning Probe ◽  
Optical Methods ◽  
Laser Source ◽  
Gold Films ◽  
Laser Oscillator ◽  
Scanning Probe Lithography

Optical methods in nanolithography have been traditionally limited by Abbe’s diffraction limit. One method able to overcome this barrier is apertureless scanning probe lithography assisted by laser. This technique has demonstrated surface nanostructuring below the diffraction limit. In this study, we demonstrate how a femtosecond Yb-doped fiber laser oscillator running at high repetition rate of 46 MHz and a pulse duration of 150 fs can serve as the laser source for near-field nanolithography. Subwavelength features were generated on the surface of gold films down to a linewidth of 10 nm. The near-field enhancement in this apertureless scanning probe lithography setup could be determined experimentally for the first time. Simulations were in good agreement with the experiments. This result supports near-field tip-enhancement as the major physical mechanisms responsible for the nanostructuring.

Characteristics of scanning-probe lithography with a current-controlled exposure system

1998 ◽  
Vol 72 (13) ◽  
pp. 1581-1583 ◽  
Author(s):  
Masayoshi Ishibashi ◽  
Seiji Heike ◽  
Hiroshi Kajiyama ◽  
Yasuo Wada ◽  
Tomihiro Hashizume
Keyword(s):  
Scanning Probe ◽  
Exposure System ◽  
Scanning Probe Lithography ◽  
Controlled Exposure ◽  
A Current

Field-emission scanning probe lithography tool for 150 mm wafer

2018 ◽  
Vol 36 (6) ◽  
pp. 06JL06 ◽  
Author(s):  
Mathias Holz ◽  
Elshad Guliyev ◽  
Ahmad Ahmad ◽  
Tzvetan Ivanov ◽  
Alexander Reum ◽  
...  
Keyword(s):  
Field Emission ◽  
Scanning Probe ◽  
Scanning Probe Lithography

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

2018 ◽  
Vol 124 (14) ◽  
pp. 144502 ◽  
Author(s):  
Zahid Durrani ◽  
Mervyn Jones ◽  
Faris Abualnaja ◽  
Chen Wang ◽  
Marcus Kaestner ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Emission ◽  
Room Temperature ◽  
Scanning Probe ◽  
Dopant Atom ◽  
Scanning Probe Lithography

scholarly journals Mechanical frictional scanning probe lithography of TMDCs

2021 ◽  
Vol 2103 (1) ◽  
pp. 012090
Author(s):  
B R Borodin ◽  
F A Benimetskiy ◽  
P A Alekseev
Keyword(s):  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Transition Metal Dichalcogenides ◽  
Conventional Technique ◽  
Scanning Probe ◽  
Pressure Force ◽  
Scanning Probe Lithography ◽  
Metal Dichalcogenides ◽  
Mechanical Scanning ◽  
20 Nm

Abstract In this work, we investigate mechanical scanning probe lithography (SPL) of thick MoSe2 flakes. The conventional technique faces difficulties in processing the thick samples due to cantilever twisting that leads to the growth of a number of defects and artifacts that decrease spatial resolution. In course of this work, we proposed the approach of frictional-SPL based on small pressure force and many repetitions of lithographic patterns. This approach allows to avoid the formation of remarkable defects and maintain high spatial resolution. By frictional-SPL, we processed thick MoSe2 flakes (up to 40 nm thick) with the highest resolution down to 20 nm. The results of this work show that frictional-SPL is an effective method of resistless lithography suitable for fabricating nanodevices based on transition metal dichalcogenides (TMDC) materials.

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