Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography
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2018 ◽
Vol 36
(6)
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pp. 06JL06
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2017 ◽
Vol 177
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pp. 19-24
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2018 ◽
Vol 36
(6)
◽
pp. 06JL02
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2019 ◽
Vol 37
(6)
◽
pp. 061803
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2015 ◽
Vol 54
(4S)
◽
pp. 04DJ02
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