Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier

2018 ◽  
Vol 36 (1) ◽  
pp. 01A112 ◽  
Author(s):  
Lukas Hoffmann ◽  
Detlef Theirich ◽  
Daniel Schlamm ◽  
Tim Hasselmann ◽  
Sven Pack ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Atomic Layer ◽  
Gas Diffusion ◽  
Pressure Plasma ◽  
Layer Deposition

Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

2016 ◽  
Vol 34 (1) ◽  
pp. 01A114 ◽  
Author(s):  
Lukas Hoffmann ◽  
Detlef Theirich ◽  
Tim Hasselmann ◽  
André Räupke ◽  
Daniel Schlamm ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Atomic Layer ◽  
Gas Permeation ◽  
Pressure Plasma ◽  
Layer Deposition

scholarly journals UV-enhanced atomic layer deposition of Al2O3 thin films at low temperature for gas-diffusion barriers

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5601-5609 ◽  
Author(s):  
Kwan Hyuck Yoon ◽  
Hongbum Kim ◽  
Yong-Eun Koo Lee ◽  
Nabeen K. Shrestha ◽  
Myung Mo Sung
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Gas Diffusion ◽  
Diffusion Barriers ◽  
Layer Deposition ◽  
Low Deposition Temperature

We present UV-ALD as a promising approach to fabricate effective gas-diffusion barrier thin films at low deposition temperature (40 °C).

Atmospheric Pressure Process for Coating Particles Using Atomic Layer Deposition

2009 ◽  
Vol 15 (7-9) ◽  
pp. 227-233 ◽  
Author(s):  
Renske Beetstra ◽  
Ugo Lafont ◽  
John Nijenhuis ◽  
Erik M. Kelder ◽  
J. Ruud van Ommen
Keyword(s):  
Atomic Layer Deposition ◽  
Atmospheric Pressure ◽  
Atomic Layer ◽  
Layer Deposition

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Some Insights into Atomic Layer Deposition of MoNx Using Mo(CO)6 and NH3 and Its Diffusion Barrier Application

2019 ◽  
Vol 31 (20) ◽  
pp. 8338-8350 ◽  
Author(s):  
Tae Hyun Kim ◽  
Dip K. Nandi ◽  
Rahul Ramesh ◽  
Seung-Min Han ◽  
Bonggeun Shong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition
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