scholarly journals Electron beam lithography patterned hydrogen silsesquioxane resist as a mandrel for self-aligned double patterning application

Author(s):  
Vishal U. Desai ◽  
John G. Hartley ◽  
Nathaniel C. Cady
2014 ◽  
Vol 53 (6S) ◽  
pp. 06JK05 ◽  
Author(s):  
Tsuyoshi Watanabe ◽  
Kouta Suzuki ◽  
Hiromasa Iyama ◽  
Takeshi Kagatsume ◽  
Shuji Kishimoto ◽  
...  

2013 ◽  
Vol 534 ◽  
pp. 113-117
Author(s):  
Takuya Komori ◽  
Hui Zhang ◽  
Takashi Akahane ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
...  

We investigated the effect of ultrahigh-resolution salty (NaCl contained) development of hydrogen silsesquioxane (HSQ) resist on forming fine dot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography for patterned media. The optimized concentration of resist developers was determined to fabricate most packed pattern. We found that increasing the concentration of NaCl into tetramethyl ammonium hydroxide (TMAH) could greatly improve the resist contrast (γ-value) of HSQ. And by using 2.3 wt% TMAH/4 wt% NaCl developer, we demonstrated 15×15 nm2 pitched (3 Tbit/in.2) HSQ resist dot arrays with a dot size of < 10 nm.


2006 ◽  
Vol 83 (4-9) ◽  
pp. 788-791 ◽  
Author(s):  
Haifang Yang ◽  
Aizi Jin ◽  
Qiang Luo ◽  
Changzhi Gu ◽  
Zheng Cui ◽  
...  

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