scholarly journals 3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

2011 ◽  
Vol 29 (6) ◽  
pp. 06F301 ◽  
Author(s):  
Joan Vila-Comamala ◽  
Sergey Gorelick ◽  
Vitaliy A. Guzenko ◽  
Christian David
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Hydrogen Silsesquioxane

Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography

2013 ◽  
Vol 534 ◽  
pp. 113-117
Author(s):  
Takuya Komori ◽  
Hui Zhang ◽  
Takashi Akahane ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ammonium Hydroxide ◽  
Hydrogen Silsesquioxane ◽  
Ultrahigh Resolution ◽  
Patterned Media ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Nanodot Arrays

We investigated the effect of ultrahigh-resolution salty (NaCl contained) development of hydrogen silsesquioxane (HSQ) resist on forming fine dot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography for patterned media. The optimized concentration of resist developers was determined to fabricate most packed pattern. We found that increasing the concentration of NaCl into tetramethyl ammonium hydroxide (TMAH) could greatly improve the resist contrast (γ-value) of HSQ. And by using 2.3 wt% TMAH/4 wt% NaCl developer, we demonstrated 15×15 nm2 pitched (3 Tbit/in.2) HSQ resist dot arrays with a dot size of < 10 nm.

Low-energy electron-beam lithography of hydrogen silsesquioxane

2006 ◽  
Vol 83 (4-9) ◽  
pp. 788-791 ◽  
Author(s):  
Haifang Yang ◽  
Aizi Jin ◽  
Qiang Luo ◽  
Changzhi Gu ◽  
Zheng Cui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Energy ◽  
Energy Electron ◽  
Hydrogen Silsesquioxane ◽  
Low Energy Electron

Nanostructuring Techniques for 3C-SiC(100) NEMS Structures

2010 ◽  
Vol 645-648 ◽  
pp. 841-844 ◽  
Author(s):  
Manuel Hofer ◽  
Thomas Stauden ◽  
Ivo W. Rangelow ◽  
Jörg Pezoldt
Keyword(s):  
Electron Beam ◽  
Crystallographic Orientation ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Dry Etching ◽  
Hydrogen Silsesquioxane ◽  
Free Standing ◽  
Feature Size ◽  
Etching Mask ◽  
Negative Tone

In this work nanostructures based on a 30 nm thick 3C-SiC (100) heteroepitaxially grown on Si(100) are demonstrated. They consist of free standing nanoresonators with dimensions below 50 nm. The free standing nanostructures and resonators were defined by electron beam lithography using hydrogen silsesquioxane (HSQ) as a negative tone e-beam resist acting as a selective etching mask during the anisotropic and isotropic dry etching. The influences of the proximity effect, the crystallographic orientation, the angle of exposing on the feature size are highlighted.

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