scholarly journals Silicon etching in a pulsed HBr/O2 plasma. I. Ion flux and energy analysis

2015 ◽  
Vol 33 (3) ◽  
pp. 032202 ◽  
Author(s):  
Moritz Haass ◽  
Maxime Darnon ◽  
Gilles Cunge ◽  
Olivier Joubert ◽  
David Gahan
Keyword(s):  
Energy Analysis ◽  
Ion Flux ◽  
Silicon Etching ◽  
O2 Plasma

Specific features of intensification of silicon etching in CF4/O2 plasma

2007 ◽  
Vol 36 (5) ◽  
pp. 321-332 ◽  
Author(s):  
Yu. N. Grigoryev ◽  
A. G. Gorobchuk
Keyword(s):  
Silicon Etching ◽  
O2 Plasma

scholarly journals Inverse RIE Lag during Silicon Etching in SF6 + O2 Plasma

2020 ◽  
Vol 137 (3) ◽  
pp. 313-316
Author(s):  
R. Knizikevičius
Keyword(s):  
Silicon Etching ◽  
O2 Plasma

Comparison of models for silicon etching in CF4 + O2 plasma

Vacuum ◽  
2012 ◽  
Vol 86 (12) ◽  
pp. 1964-1968 ◽  
Author(s):  
R. Knizikevičius
Keyword(s):  
Silicon Etching ◽  
O2 Plasma

scholarly journals Comparison between Bosch and STiGer Processes for Deep Silicon Etching

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1143
Author(s):  
Thomas Tillocher ◽  
Jack Nos ◽  
Gaëlle Antoun ◽  
Philippe Lefaucheux ◽  
Mohamed Boufnichel ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cryogenic Temperature ◽  
Plasma Chemistry ◽  
Silicon Etching ◽  
Bosch Process ◽  
Isotropic Etching ◽  
Cryogenic Process ◽  
Sidewall Passivation ◽  
Free Plasma ◽  
O2 Plasma

The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented. Like the Bosch process, it consists in repeating cycles composed of an isotropic etching step followed by a passivation step. If the etching step is similar for both processes, the passivation step is a SiF4/O2 plasma that efficiently deposits a SiOxFy layer on the sidewalls only if the substrate is cooled at cryogenic temperature. In this paper, it is shown that the STiGer process can achieve profiles and performances equivalent to the Bosch process. However, since sidewall passivation is achieved with polymer free plasma chemistry, less frequent chamber cleaning is necessary, which contributes to increase the throughput.

A General Method for Spectrometer Design in the Scoff Approximation

1976 ◽  
Vol 34 ◽  
pp. 538-539
Author(s):  
J. R. Fields
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Energy Analysis ◽  
Incident Beam ◽  
Scanning Transmission Electron Microscope ◽  
Chemical Identification ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
General Method

The energy analysis of electrons scattered by a specimen in a scanning transmission electron microscope can improve contrast as well as aid in chemical identification. In so far as energy analysis is useful, one would like to be able to design a spectrometer which is tailored to his particular needs. In our own case, we require a spectrometer which will accept a parallel incident beam and which will focus the electrons in both the median and perpendicular planes. In addition, since we intend to follow the spectrometer by a detector array rather than a single energy selecting slit, we need as great a dispersion as possible. Therefore, we would like to follow our spectrometer by a magnifying lens. Consequently, the line along which electrons of varying energy are dispersed must be normal to the direction of the central ray at the spectrometer exit.

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