Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle

2015 ◽  
Vol 33 (1) ◽  
pp. 01A146 ◽  
Author(s):  
Haiwon Kim ◽  
Ilsub Chung ◽  
Seokyun Kim ◽  
Seungwoo Shin ◽  
Wooduck Jung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Treatment Cycle ◽  
Atomic Layer ◽  
Layer Deposition

Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition

2019 ◽  
Vol 31 (11) ◽  
pp. 3900-3908 ◽  
Author(s):  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Jaime A. Freitas ◽  
Neeraj Nepal ◽  
David R. Boris ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Tio2 Films ◽  
Layer Deposition ◽  
Phase Selectivity

Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment

2012 ◽  
Vol 93 ◽  
pp. 15-18 ◽  
Author(s):  
Dawei Xu ◽  
Xinhong Cheng ◽  
Youwei Zhang ◽  
Zhongjian Wang ◽  
Chao Xia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Atomic Layer ◽  
Layer Deposition

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 486-489 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Electric Field ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Al2o3 Layer ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Layer Deposition ◽  
The Stability

This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.

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