Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

2011 ◽  
Vol 99 (19) ◽  
pp. 193505 ◽  
Author(s):  
A. Molle ◽  
L. Lamagna ◽  
C. Grazianetti ◽  
G. Brammertz ◽  
C. Merckling ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition

2019 ◽  
Vol 31 (11) ◽  
pp. 3900-3908 ◽  
Author(s):  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Jaime A. Freitas ◽  
Neeraj Nepal ◽  
David R. Boris ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Tio2 Films ◽  
Layer Deposition ◽  
Phase Selectivity

Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle

2015 ◽  
Vol 33 (1) ◽  
pp. 01A146 ◽  
Author(s):  
Haiwon Kim ◽  
Ilsub Chung ◽  
Seokyun Kim ◽  
Seungwoo Shin ◽  
Wooduck Jung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Treatment Cycle ◽  
Atomic Layer ◽  
Layer Deposition

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 486-489 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Electric Field ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Al2o3 Layer ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Layer Deposition ◽  
The Stability

This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.

scholarly journals Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

2020 ◽  
Author(s):  
Petro Deminskyi ◽  
Chih-Wei Hsu ◽  
Babak Bakhit ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Amorphous Films ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Surface Ligand ◽  
Reactive Pulse

Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 °C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increase when a B-pulse is added. We suggest that this can be explained by removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of X-ray amorphous films.

scholarly journals Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 406 ◽  
Author(s):  
Heli Seppänen ◽  
Iurii Kim ◽  
Jarkko Etula ◽  
Evgeniy Ubyivovk ◽  
Alexei Bouravleuv ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Organic Chemical ◽  
Layer Deposition ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

scholarly journals Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 954
Author(s):  
Rashid Dallaev ◽  
Dinara Sobola ◽  
Pavel Tofel ◽  
Ľubomir Škvarenina ◽  
Petr Sedlák
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Atomic Layer ◽  
Nitrogen Atmosphere ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Secondary Ion

The aim of this study is motivated by the pursuit to investigate the performance of new and as yet untested precursors such as hydrazinium chloride (N2H5Cl) and triisobutylaluminum Al(C4H9)3 in the AlN atomic layer deposition (ALD) process as well as to study effects of successive annealing on the quality of the resulting layer. Both precursors are significantly cheaper than their conventional counterparts while also being widely available and can boast easy handling. Furthermore, Al(C4H9)3 being a rather large molecule might promote steric hindrance and prevent formation of undesired hydrogen bonds. Chemical analysis is provided by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS) techniques; surface morphology was studied using atomic force microscopy (AFM). Chlorine containing precursors such as AlCl3 are usually avoided in ALD process due to the risk of chamber contamination. However, experimental data of this study demonstrated that the use of N2H5Cl does not result in chlorine contamination due to the fact that temperature needed for HCl molecules to become reactive cannot be reached within the AlN ALD window (200–350 °C). No amount of chlorine was detected even by the most sensitive techniques such as SIMS, meaning it is fully removed out of the chamber during purge stages. A part of the obtained samples was subjected to annealing (1350 °C) to study effects of high-temperature processing in nitrogen atmosphere, the comparisons with unprocessed samples are provided.

scholarly journals INVESTIGATION OF CHARGE TRAPS AT Al-DOPED HfO2/(100)InGaAs INTERFACE BY USING CAPACITANCE AND CONDUCTANCE METHODS

2018 ◽  
Vol 56 (1A) ◽  
pp. 110
Author(s):  
Thoan Nguyen Hoang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Interface Traps ◽  
Deposition Technique ◽  
Al Doping ◽  
Interface Quality ◽  
Layer Deposition

In this study, capacitance and conductance methods were used to investigate the charge traps at a HfO2/(100)InGaAs interface with an atomic layer deposition HfO2 layer doped with Al2O3 by co-deposition technique. The effect of Al doping on the quality of the HfO2/In0.53Ga0.47As interface will be evaluated. The density of interface traps (D­it) near In0.53Ga0.47As midgap is close to 2×1012 cm−2eV−1. Based on comparison to the HfO2/In0.53Ga0.47As interface without Al2O3 interfacial passivation where the value Dit∼1013 cm−2eV−1 is encountered near the midgap, we can conclude that the presence of Al2O3 passivation noticeably improves the interface quality. 

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