Large-area microwave and radiofrequency plasma etching of polymers

1988 ◽  
Vol 8 (3) ◽  
pp. 315-329 ◽  
Author(s):  
A. M. Wrobel ◽  
B. Lamontagne ◽  
M. R. Wertheimer
Keyword(s):  
Plasma Etching ◽  
Large Area

Large area strip edgeless detectors fabricated by plasma etching process

2007 ◽  
Author(s):  
G. Pellegrini ◽  
J. Balbuena ◽  
V. Eremin ◽  
C. Garcia ◽  
C. Lacasta ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etching Process ◽  
Large Area ◽  
Plasma Etching Process

Large-area microwave plasma etching of polyimide

1987 ◽  
Vol 20 (7) ◽  
pp. 844-850 ◽  
Author(s):  
B Lamontagne ◽  
A M Wrobel ◽  
G Jalbert ◽  
M R Wertheimer
Keyword(s):  
Plasma Etching ◽  
Microwave Plasma ◽  
Large Area

Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers

2002 ◽  
Vol 46 (5) ◽  
pp. 685-688 ◽  
Author(s):  
J.W. Lee ◽  
P.G. Jung ◽  
M. Devre ◽  
R. Westermann ◽  
S.J. Pearton
Keyword(s):  
Plasma Etching ◽  
Gas Flow ◽  
Etch Depth ◽  
Large Area

Plasma Etching Conditioning of Textured Crystalline Silicon Surfaces for a-Si/c-Si Heterojunctions

1999 ◽  
Vol 557 ◽  
Author(s):  
R. De Rosa ◽  
M.L. Addonizio ◽  
E. Chiacchio ◽  
F. Roca ◽  
M. Tucci
Keyword(s):  
Plasma Etching ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Native Oxide ◽  
Process Conditions ◽  
Native Oxide Layer ◽  
Plasma Process ◽  
Large Area ◽  
Layer Deposition

AbstractThe development of a hybrid heterojunction fabricated by growing ultrathin amorphous silicon by Plasma Enhanced Chemical Vapor Deposition using temperatures below 250°C offers the potential of obtaining high efficiency solar cells deposited on glassy substrates. The surface preparation represents one of the most critical steps. The first aim of etching is to remove the native oxide layer from the surface of the crystalline wafer, before amorphous layer deposition. The possibility of obtaining this goal with a dry procedure that reduces the exposure of the sample to the environment is not trivial.We performed several dry etching processes but the best results were obtained using an etching process involving CF4/O2 gases. We have found evidence that plasma etching acts by removing the native oxide and the damaged surface of textured silicon and by leaving an active layer on silicon surface suitable for the emitter deposition. SEM analysis has confirmed that it is possible to find plasma process conditions where no appreciable damage and changes in surface morphology are induced. Detailed investigation was performed to find compatibility and optimization of amorphous layer deposition both on flat and textured cast silicon by changing the plasma process parameters. By using this process we achieved on cast silicon for solar applications photovoltaic conversion efficiencies of 12.9% on 51 cm2 and 9.2% on 45 cm2 active areas for amorphous crystalline heterostructure devices realized on monocrystalline and polycrystalline silicon respectively. We also investigated the compatibility of the process with industrial production of large area devices.

Simulation of Discharge Characteristics for the Plasma Etching of Large Area SiO2 Substrates

2020 ◽  
Vol 41 (3) ◽  
pp. 258-267
Author(s):  
Jingwen Zhang ◽  
Bin Fan ◽  
Zhiwei Li ◽  
Guohan Gao ◽  
Bincheng Li ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Large Area ◽  
Discharge Characteristics

A Novel Fabrication Process of Large Area Triangular Nanocavity Arrays by Bilayer Nanosphere Lithography

2012 ◽  
Vol 516 ◽  
pp. 447-451 ◽  
Author(s):  
Chao Guang Wang ◽  
Hong Juan Cui ◽  
Pei Tao Dong ◽  
Di Di ◽  
Jian Chen ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Plasma Etching ◽  
Self Assembly ◽  
Spin Coating ◽  
Nanosphere Lithography ◽  
Silicon Etching ◽  
Cavity Size ◽  
Large Area ◽  
Oxygen Plasma Etching ◽  
Cr Film

A simple and novel self-assembly based process is presented in this paper for the fabrication of gold triangular nanocavity arrays. This process combines nanosphere lithography (NSL) with some standard MEMS technologies. A carboxylated polystyrene (PS) nanosphere bilayer with a relatively large area is fabricated on silicon wafer as the starting template by spin-coating. Oxygen plasma etching, metal deposition and lifting-off of the PS upper layer are then orderly carried out for the formation of triangular space, which is made up of Cr film and the remaining PS nanoparticles. Then silicon etching is used to transfer the triangle pattern onto the silicon wafer. Finally, a 50 nm thick gold layer is deposited on the pattern to fabricate gold triangular nanocavity arrays. With this strategy, both the period and the cavity size can be adjusted independently. This will allow the tuning of the optical properties for desired application.

scholarly journals Precision fabrication of large area silicon-based geometrically enhanced x-ray photocathodes using plasma etching

2015 ◽  
Author(s):  
Y. P. Opachich ◽  
N. Chen ◽  
P. M. Bell ◽  
D. K. Bradley ◽  
J. Feng ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Large Area ◽  
X Ray ◽  
Silicon Based
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