scholarly journals Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Alireza Kazemi ◽  
Xiang He ◽  
Seyedhamidreza Alaie ◽  
Javad Ghasemi ◽  
Noel Mayur Dawson ◽  
...  
Keyword(s):  
Large Area ◽  
Interferometric Lithography ◽  
Graphene Nanomesh

scholarly journals Retraction Note: Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alireza Kazemi ◽  
Xiang He ◽  
Seyedhamidreza Alaie ◽  
Javad Ghasemi ◽  
Noel Mayur Dawson ◽  
...  
Keyword(s):  
Large Area ◽  
Link Type ◽  
Interferometric Lithography ◽  
Graphene Nanomesh

Editor's Note: this Article has been retracted; the Retraction Note is available at https://doi.org/10.1038/s41598-021-84101-3.

Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography

1999 ◽  
Vol 85 (8) ◽  
pp. 6160-6162 ◽  
Author(s):  
T. A. Savas ◽  
M. Farhoud ◽  
Henry I. Smith ◽  
M. Hwang ◽  
C. A. Ross
Keyword(s):  
Large Area ◽  
Interferometric Lithography

Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling

2018 ◽  
Vol 10 (12) ◽  
pp. 10362-10368 ◽  
Author(s):  
Marek Edward Schmidt ◽  
Takuya Iwasaki ◽  
Manoharan Muruganathan ◽  
Mayeesha Haque ◽  
Huynh Van Ngoc ◽  
...  
Keyword(s):  
Ion Beam ◽  
Large Area ◽  
Helium Ion ◽  
Graphene Nanomesh

Sub-Wavelength Texturing for Solar Cells Using Interferometric Lithography

2006 ◽  
Vol 51 ◽  
pp. 115-120 ◽  
Author(s):  
W.L. Chiu ◽  
M.M. Alkaisi ◽  
G. Kumaravelu ◽  
R.J. Blaikie ◽  
R.J. Reeves ◽  
...  
Keyword(s):  
Defect Density ◽  
Substantial Reduction ◽  
Surface Texturing ◽  
Silicon Substrates ◽  
Textured Surface ◽  
Large Area ◽  
Periodic Patterns ◽  
Interferometric Lithography ◽  
Plasma Reflection ◽  
Sub Wavelength

We have employed Interferometric Lithography (IL) for sub-wavelength surface texturing on large area silicon substrates. Low defect density Reactive Ion Etching (RIE) processes have been developed to transfer the pattern into the silicon using SF 6 plasma. Reflection measurements on the sub-wavelength textured surface have been carried out and show a substantial reduction from ~30% to below 4% over the spectrum range from 400nm to 1200nm. IL is a mask-less lithography technique which is used to define periodic patterns. The theoretical limit of the pitch size of the structure is half of the wavelength of the light source. Hence, the sub-wavelength patterns can be achieved easily. Moreover, sub-wavelength texturing requires short RIE processes; most of the plasma-induced damage on the silicon surface can be avoided.

Fabrication of large area nanostructured magnets by interferometric lithography

1998 ◽  
Vol 34 (4) ◽  
pp. 1087-1089 ◽  
Author(s):  
M. Farhoud ◽  
M. Hwang ◽  
H.I. Smith ◽  
M.L. Schattenburg ◽  
J.M. Bae ◽  
...  
Keyword(s):  
Large Area ◽  
Interferometric Lithography

Large area nanopatterning of alkylphosphonate self-assembled monolayers on titanium oxide surfaces by interferometric lithography

Nanoscale ◽  
2011 ◽  
Vol 3 (6) ◽  
pp. 2511 ◽  
Author(s):  
Getachew Tizazu ◽  
Osama El-Zubir ◽  
Steven R. J. Brueck ◽  
David G. Lidzey ◽  
Graham J. Leggett ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Self Assembled Monolayers ◽  
Oxide Surfaces ◽  
Large Area ◽  
Interferometric Lithography ◽  
Assembled Monolayers ◽  
Self Assembled

Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate

ACS Nano ◽  
2018 ◽  
Vol 12 (3) ◽  
pp. 2373-2380 ◽  
Author(s):  
Mahmoud Behzadirad ◽  
Mohsen Nami ◽  
Neal Wostbrock ◽  
Mohammad Reza Zamani Kouhpanji ◽  
Daniel F. Feezell ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Single Mode ◽  
Large Area ◽  
Top Down ◽  
Laser Arrays ◽  
Interferometric Lithography ◽  
Gan Nanowire
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