In Situ Studies of Electron Cyclotron Resonance Plasma Etching of Semiconductors by Spectroscopic Ellipsometry

1992 ◽  
Vol 279 ◽  
Author(s):  
S. Nafis ◽  
N. J. Ianno ◽  
Paul G. Snyder ◽  
John A. Woollam ◽  
Blame Johs
Keyword(s):  
Real Time ◽  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Bulk Silicon ◽  
Bulk Materials ◽  
Insight Into ◽  
Resonance Plasma

ABSTRACTIn situ ellipsometry at selected wavelengths in the spectral range 280 nm to 1000 nnn was performed during the rf bias assisted electron cyclotron resonance (ECR) etching of bulk silicon, GaAs, InP, and GaAs/AlGaAs/GaAs, and InGaAs/InP layered strcutures by a CCl2F2 based etch gas.While real time thickness changes for bulk materials cannot be determined ellipsometrically, some insight into the etch mechanism may be gained by observing the effect of the process on the surface dynamically, and after the etch process has been completed. Monitoring of the layered structures during etching can provide a real time measure of the amount of material remaining in the layer being etched, and provide tight process control.

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

1990 ◽  
Vol 56 (15) ◽  
pp. 1424-1426 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Kinsella ◽  
D. Johnson ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Evaluation of Semiconductor Lattice Damage Using a Newly-Developed Photodisplacement Laser Probe

1991 ◽  
Vol 236 ◽  
Author(s):  
S. Sumie ◽  
H. Takamatsu ◽  
H. Tsunaki ◽  
Y. Nishimoto ◽  
Y Nakai
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Laser Probe ◽  
Low Level ◽  
Highly Sensitive ◽  
Lattice Damage ◽  
Density Surface ◽  
Resonance Plasma

AbstractA highly sensitive laser probe for photo-acoustic displacement(PAD) has been developed and applied to the monitoring of low-level lattice damage in semiconductors. Since a photodisplacement laser probe with the sensitivity of 0.1 picometers is employed in this measurement, lower density damage for instance, formed by 50 keV B+ implantation with a dose of 5X109 ions/cm2 can be detected. Correlation of the PAD with damage density was obtained in B+ implantation. Therefore, quantitative damage density can be obtained from the relation for lightly damaged layers, such as formed by chemomechanical polishing and by electron cyclotron resonance plasma etching. This technique is useful-for monitoring of low damage density surface.

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

1996 ◽  
Vol 69 (10) ◽  
pp. 1426-1428 ◽  
Author(s):  
C. B. Vartuli ◽  
S. J. Pearton ◽  
J. W. Lee ◽  
J. Hong ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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